JPS59101449U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS59101449U JPS59101449U JP19866282U JP19866282U JPS59101449U JP S59101449 U JPS59101449 U JP S59101449U JP 19866282 U JP19866282 U JP 19866282U JP 19866282 U JP19866282 U JP 19866282U JP S59101449 U JPS59101449 U JP S59101449U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- conductivity type
- base region
- semiconductor equipment
- collector electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はトランジスタの保護回路の一例を示す回路図、
第２図および第３図はそれぞれ従来の半導体装置を示す
断面図、第４図乃至第８図はこの考案の一実施例に係る
半導体装置を製造過程順に示す断面図、第９図はショッ
トキーダイオードの比抵抗と逆耐圧との関係を示す図で
ある。Figure 1 is a circuit diagram showing an example of a transistor protection circuit.
2 and 3 are cross-sectional views showing conventional semiconductor devices, FIGS. 4 to 8 are cross-sectional views showing semiconductor devices according to an embodiment of this invention in the order of manufacturing process, and FIG. 9 is a Schottky FIG. 3 is a diagram showing the relationship between specific resistance and reverse breakdown voltage of a diode.
Claims (1)
のベース領域と、こ、のベース領域内を千形成された一
方導電型のエミッタ領域と、上記半導体基体表面のベー
ス領域と離間した部位に形成された半導体と金属との合
金から成るコレクタ電極部とを具備し、上記コレクタ電
極部と上記半導体・ 基体との間にショットキー接合
が形成されていることを特徴とする半導体装置。A base region of one conductivity type provided on the surface of the semiconductor substrate of one conductivity type, an emitter region of one conductivity type formed within the base region, and a portion of the surface of the semiconductor substrate separated from the base region. 1. A semiconductor device comprising: a collector electrode portion made of an alloy of a semiconductor and a metal formed in the semiconductor device; and a Schottky junction is formed between the collector electrode portion and the semiconductor/substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19866282U JPS59101449U (en) | 1982-12-25 | 1982-12-25 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19866282U JPS59101449U (en) | 1982-12-25 | 1982-12-25 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59101449U true JPS59101449U (en) | 1984-07-09 |
Family
ID=30424227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19866282U Pending JPS59101449U (en) | 1982-12-25 | 1982-12-25 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59101449U (en) |
-
1982
- 1982-12-25 JP JP19866282U patent/JPS59101449U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS59101449U (en) | semiconductor equipment | |
| JPS58168149U (en) | transistor | |
| JPS58184856U (en) | semiconductor equipment | |
| JPS59128748U (en) | semiconductor equipment | |
| JPS5892744U (en) | semiconductor element | |
| JPS5887363U (en) | semiconductor equipment | |
| JPS6139959U (en) | semiconductor equipment | |
| JPS5869942U (en) | semiconductor equipment | |
| JPS5829850U (en) | Composite semiconductor device | |
| JPS6016562U (en) | Shock barrier type semiconductor device | |
| JPS60153548U (en) | Lateral transistor | |
| JPS60137453U (en) | semiconductor equipment | |
| JPS5827936U (en) | semiconductor equipment | |
| JPS5860951U (en) | semiconductor equipment | |
| JPS59115651U (en) | semiconductor equipment | |
| JPS58195458U (en) | semiconductor equipment | |
| JPS58124953U (en) | Semiconductor integrated circuit device | |
| JPS59121853U (en) | semiconductor equipment | |
| JPS5981046U (en) | darlington transistor | |
| JPS6115761U (en) | Semiconductor integrated circuit device | |
| JPS5829852U (en) | Zener diode incorporated into semiconductor integrated circuit | |
| JPS60144255U (en) | transistor | |
| JPS60153552U (en) | PN junction semiconductor device | |
| JPS5937730U (en) | semiconductor equipment | |
| JPS5995645U (en) | semiconductor equipment |