JPS6429857U - - Google Patents
Info
- Publication number
- JPS6429857U JPS6429857U JP12492687U JP12492687U JPS6429857U JP S6429857 U JPS6429857 U JP S6429857U JP 12492687 U JP12492687 U JP 12492687U JP 12492687 U JP12492687 U JP 12492687U JP S6429857 U JPS6429857 U JP S6429857U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- semiconductor element
- semiconductor device
- gate
- junction field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Amplifiers (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
Description
第１図は本考案のコンデンサマイク用半導体装
置の等価回路図、第２図は本考案の他の実施例で
あるコンデンサマイク用半導体装置の等価回路図
、第３図は第２図のコンデンサマイク用半導体装
置の平面図、第４図は従来のコンデンサマイク用
半導体装置の等価回路図、第５図は第４図のコン
デンサマイク用半導体装置の平面図である。
１はコンデンサマイク用半導体装置、２はＪ―
ＦＥＴ、３はソース、４はゲート、５はダイオー
ド、６はドレイン、７はツエナーダイオード、８
はポリシリコン抵抗体、９は半導体装置、１０，
１１，１２，１３は第１乃至第４の島領域、１４
は分離領域、１５，１６はゲート領域、１７はド
レイン領域、１８，１９はソース領域、２０，２
１，２２はコンタクト領域、２３は電極、２４，
２５はコンタクト領域、２６はドレインボンデイ
ングパツド、２７，２８，２９は電極、３０はソ
ースボンデイングパツド、３１はアノード領域、
３２はカソード領域、３３，３４は電極、３５は
アノード領域、３６はカソード領域、３７は電極
、３８，３９は重畳部である。
Fig. 1 is an equivalent circuit diagram of a semiconductor device for a condenser microphone according to the present invention, Fig. 2 is an equivalent circuit diagram of a semiconductor device for a condenser microphone according to another embodiment of the present invention, and Fig. 3 is an equivalent circuit diagram of a semiconductor device for a condenser microphone according to the present invention. 4 is an equivalent circuit diagram of a conventional semiconductor device for a condenser microphone, and FIG. 5 is a plan view of the semiconductor device for a condenser microphone shown in FIG. 4. 1 is a semiconductor device for condenser microphone, 2 is J-
FET, 3 is source, 4 is gate, 5 is diode, 6 is drain, 7 is Zener diode, 8
is a polysilicon resistor, 9 is a semiconductor device, 10,
11, 12, 13 are first to fourth island areas, 14
are isolation regions, 15 and 16 are gate regions, 17 are drain regions, 18 and 19 are source regions, 20 and 2
1 and 22 are contact regions, 23 are electrodes, 24,
25 is a contact region, 26 is a drain bonding pad, 27, 28, 29 are electrodes, 30 is a source bonding pad, 31 is an anode region,
32 is a cathode region, 33 and 34 are electrodes, 35 is an anode region, 36 is a cathode region, 37 is an electrode, and 38 and 39 are overlapping parts.
Claims (1)
接合型電界効果半導体素子のゲート・ソース間に
接続された接合ダイオードと、前記接合型電界効
果半導体素子のゲート・ドレイン間に接続された
ツエナーダイオードとを具備することを特徴とし
たコンデンサマイク用半導体装置。 It includes at least a junction field effect semiconductor element, a junction diode connected between the gate and source of the junction field effect semiconductor element, and a Zener diode connected between the gate and drain of the junction field effect semiconductor element. A semiconductor device for a condenser microphone characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12492687U JPS6429857U (en) | 1987-08-17 | 1987-08-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12492687U JPS6429857U (en) | 1987-08-17 | 1987-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6429857U true JPS6429857U (en) | 1989-02-22 |
Family
ID=31375077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12492687U Pending JPS6429857U (en) | 1987-08-17 | 1987-08-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6429857U (en) |
-
1987
- 1987-08-17 JP JP12492687U patent/JPS6429857U/ja active Pending