JPH0477265U - - Google Patents
Info
- Publication number
- JPH0477265U JPH0477265U JP12060590U JP12060590U JPH0477265U JP H0477265 U JPH0477265 U JP H0477265U JP 12060590 U JP12060590 U JP 12060590U JP 12060590 U JP12060590 U JP 12060590U JP H0477265 U JPH0477265 U JP H0477265U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- mos capacitor
- oxide film
- well region
- gate oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims 3
- 230000003071 parasitic effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案のＭＯＳキヤパシタの実施例を
示す断面図、第２図は本考案のＭＯＳキヤパシタ
のＣ−Ｖ特性図、第３図は本考案のＭＯＳキヤパ
シタの等価回路図、第４図乃至第６図は本考案の
ＭＯＳキヤパシタの実施例に係るパターン形状を
示す平面図である。第７図は従来のＭＯＳキヤパ
シタを示す断面図、第８図は従来例のＭＯＳキヤ
パシタのＣ−Ｖ特性図である。
Fig. 1 is a sectional view showing an embodiment of the MOS capacitor of the invention, Fig. 2 is a CV characteristic diagram of the MOS capacitor of the invention, Fig. 3 is an equivalent circuit diagram of the MOS capacitor of the invention, and Fig. 4. 6 to 6 are plan views showing pattern shapes according to embodiments of the MOS capacitor of the present invention. FIG. 7 is a sectional view showing a conventional MOS capacitor, and FIG. 8 is a CV characteristic diagram of the conventional MOS capacitor.
Claims (1)
ウエル領域と、 前記ウエル領域上に形成されたゲート酸化膜と
、 前記ゲート酸化膜上に形成されたゲート電極と
からなるＭＯＳキヤパシタにおいて、 前記基板表面に設けられた基板電極及び前記ウ
エル領域表面に設けられたウエル電極に同一の電
源電圧が接続されていることを特徴とするＭＯＳ
キヤパシタ。 (2) 前記ゲート電極が長四角状、櫛歯状又はジ
グザグ状に延在され、該ゲート電極の周囲に前記
ウエル電極を設けることによりＭＯＳキヤパシタ
の寄生抵抗を低減化したことを特徴とする請求項
第１項記載のＭＯＳキヤパシタ。[Claims for Utility Model Registration] (1) A P-type well region formed on the surface of an N-type semiconductor substrate, a gate oxide film formed on the well region, and a gate oxide film formed on the gate oxide film. A MOS capacitor comprising a gate electrode, wherein the same power supply voltage is connected to the substrate electrode provided on the surface of the substrate and the well electrode provided on the surface of the well region.
Capacita. (2) A claim characterized in that the gate electrode extends in a rectangular shape, a comb-like shape, or a zigzag shape, and the well electrode is provided around the gate electrode to reduce the parasitic resistance of the MOS capacitor. MOS capacitor according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12060590U JPH0477265U (en) | 1990-11-16 | 1990-11-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12060590U JPH0477265U (en) | 1990-11-16 | 1990-11-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0477265U true JPH0477265U (en) | 1992-07-06 |
Family
ID=31868504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12060590U Pending JPH0477265U (en) | 1990-11-16 | 1990-11-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0477265U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233799A (en) * | 1997-09-03 | 1999-08-27 | Motorola Inc | Variable capacitor and its manufacture |
-
1990
- 1990-11-16 JP JP12060590U patent/JPH0477265U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233799A (en) * | 1997-09-03 | 1999-08-27 | Motorola Inc | Variable capacitor and its manufacture |
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