JPH0477266U - - Google Patents
Info
- Publication number
- JPH0477266U JPH0477266U JP12060690U JP12060690U JPH0477266U JP H0477266 U JPH0477266 U JP H0477266U JP 12060690 U JP12060690 U JP 12060690U JP 12060690 U JP12060690 U JP 12060690U JP H0477266 U JPH0477266 U JP H0477266U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- mos capacitor
- oxide film
- well region
- gate oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims 3
- 230000003071 parasitic effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案のＭＯＳキヤパシタの実施例を
示す断面図、第２図は本考案のＭＯＳキヤパシタ
のＣ−Ｖ特性図、第３図は本考案のＭＯＳキヤパ
シタの等価回路図、第４図乃至第６図は本考案の
ＭＯＳキヤパシタの実施例に係るパターン形状を
示す平面図である。第７図は従来のＭＯＳキヤパ
シタを示す断面図、第８図は従来例のＭＯＳキヤ
パシタのＣ−Ｖ特性図である。
Fig. 1 is a sectional view showing an embodiment of the MOS capacitor of the invention, Fig. 2 is a CV characteristic diagram of the MOS capacitor of the invention, Fig. 3 is an equivalent circuit diagram of the MOS capacitor of the invention, and Fig. 4 6 to 6 are plan views showing pattern shapes according to embodiments of the MOS capacitor of the present invention. FIG. 7 is a sectional view showing a conventional MOS capacitor, and FIG. 8 is a CV characteristic diagram of the conventional MOS capacitor.
Claims (1)
ウエル領域と、 前記ウエル領域上に形成されたゲート酸化膜と
、 前記ゲート酸化膜上に形成されたゲート電極と
からなるＭＯＳキヤパシタにおいて、 前記基板表面に設けられた基板電極及び前記ウ
エル領域表面に設けられたウエル電極に接地電圧
が接続されていることを特徴とするＭＯＳキヤパ
シタ。 (2) 前記ゲート電極が長四角状、櫛歯状又はジ
グザグ状に延在され、該ゲート電極の周囲に前記
ウエル電極を設けることによりＭＯＳキヤパシタ
の寄生抵抗を低減化したことを特徴とする請求項
第１項記載のＭＯＳキヤパシタ。[Claims for Utility Model Registration] (1) An N-type well region formed on the surface of a P-type semiconductor substrate, a gate oxide film formed on the well region, and a gate oxide film formed on the gate oxide film. A MOS capacitor comprising a gate electrode, wherein a ground voltage is connected to a substrate electrode provided on the surface of the substrate and a well electrode provided on the surface of the well region. (2) A claim characterized in that the gate electrode extends in a rectangular shape, a comb-like shape, or a zigzag shape, and the well electrode is provided around the gate electrode to reduce the parasitic resistance of the MOS capacitor. MOS capacitor according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12060690U JPH0477266U (en) | 1990-11-16 | 1990-11-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12060690U JPH0477266U (en) | 1990-11-16 | 1990-11-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0477266U true JPH0477266U (en) | 1992-07-06 |
Family
ID=31868505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12060690U Pending JPH0477266U (en) | 1990-11-16 | 1990-11-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0477266U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233799A (en) * | 1997-09-03 | 1999-08-27 | Motorola Inc | Variable capacitor and its manufacture |
| JP2001516955A (en) * | 1997-09-11 | 2001-10-02 | テレフオンアクチーボラゲツト エル エム エリクソン | Electric device and manufacturing method thereof |
| JP2006303019A (en) * | 2005-04-18 | 2006-11-02 | Pentax Corp | Imaging device |
-
1990
- 1990-11-16 JP JP12060690U patent/JPH0477266U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233799A (en) * | 1997-09-03 | 1999-08-27 | Motorola Inc | Variable capacitor and its manufacture |
| JP2001516955A (en) * | 1997-09-11 | 2001-10-02 | テレフオンアクチーボラゲツト エル エム エリクソン | Electric device and manufacturing method thereof |
| JP2006303019A (en) * | 2005-04-18 | 2006-11-02 | Pentax Corp | Imaging device |
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