JPS63198342U - - Google Patents
Info
- Publication number
- JPS63198342U JPS63198342U JP8907487U JP8907487U JPS63198342U JP S63198342 U JPS63198342 U JP S63198342U JP 8907487 U JP8907487 U JP 8907487U JP 8907487 U JP8907487 U JP 8907487U JP S63198342 U JPS63198342 U JP S63198342U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- power source
- protection device
- releases
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
- Protection Of Static Devices (AREA)
Description
第１図は本考案の一実施例図であり、Ａは回路
図、Ｂは負電荷を逃すダイオード２０の構造断面
図、Ｃは負電荷を逃すダイオード２０の構造のレ
イアウトを示す平面図、第２図は本考案の他の実
施例図、第３図は従来装置の一例図である。
符号の説明１……外部端子、２……保護抵抗、
３……正電荷を逃すダイオード、４……負電荷を
逃すダイオード、５……接点側Ａｌ電極、６……
ｎ＋領域、７……ｐウエル領域、８……ｐウエル
抵抗、９……ｐ＋領域、１０……電源側Ａｌ電極
、１１……ポリＳｉ抵抗、１２……電圧電源端子
、１３……接点、１４……ｎ−半導体基板。
FIG. 1 shows an embodiment of the present invention, in which A is a circuit diagram, B is a cross-sectional view of the structure of the diode 20 that releases negative charges, C is a plan view showing the layout of the structure of the diode 20 that releases negative charges, and FIG. FIG. 2 shows another embodiment of the present invention, and FIG. 3 shows an example of a conventional device. Explanation of symbols 1...External terminal, 2...Protection resistor,
3...Diode that releases positive charges, 4...Diode that releases negative charges, 5...Al electrode on the contact side, 6...
n + region, 7...p well region, 8...p well resistance, 9...p + region, 10...power supply side Al electrode, 11...poly-Si resistor, 12...voltage power supply terminal, 13... Contact, 14...n - semiconductor substrate.
Claims (1)
荷を逃す第１ダイオードとＧＮＤ電源に負電荷を
逃す第２ダイオードとを接続した半導体保護装置
において、上記第２のダイオードに直列に抵抗を
組み込んだことを特徴とする半導体保護装置。 In a semiconductor protection device that connects a first diode that releases positive charges from an input terminal to a voltage power source via a protective resistor and a second diode that releases negative charges to a GND power source, a resistor is built in series with the second diode. A semiconductor protection device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8907487U JPS63198342U (en) | 1987-06-11 | 1987-06-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8907487U JPS63198342U (en) | 1987-06-11 | 1987-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63198342U true JPS63198342U (en) | 1988-12-21 |
Family
ID=30947729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8907487U Pending JPS63198342U (en) | 1987-06-11 | 1987-06-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63198342U (en) |
-
1987
- 1987-06-11 JP JP8907487U patent/JPS63198342U/ja active Pending
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