JPS54127684A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54127684A
JPS54127684A JP3580378A JP3580378A JPS54127684A JP S54127684 A JPS54127684 A JP S54127684A JP 3580378 A JP3580378 A JP 3580378A JP 3580378 A JP3580378 A JP 3580378A JP S54127684 A JPS54127684 A JP S54127684A
Authority
JP
Japan
Prior art keywords
region
junction
layer
constitution
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3580378A
Other languages
Japanese (ja)
Other versions
JPS6237547B2 (en
Inventor
Yutaka Onda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3580378A priority Critical patent/JPS54127684A/en
Publication of JPS54127684A publication Critical patent/JPS54127684A/en
Publication of JPS6237547B2 publication Critical patent/JPS6237547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a semiconductor device possessing the excellent input protecting function without sacrificing the inherent characteristics of the device. CONSTITUTION:N-type diffusion layer 2 is provided to the N-type substrate as the reverse conducting region to form high-density p<+> region 17 and the P-N junction. Region 17 is provided around layer 2 to lower the backward breakdown voltage of the diode as well as to increase the junction capacity. The functioning principle of the input protecting circuit of such constitution is identical to the conventional one. But the p<+> region is provided to the substrate around layer 2 installed for protection purpose, and thus the density slope of the junction becomes more sudden than that of the conventional one with only layer 2. As a result, the backward breakdown voltage of the diode lowers, and the junction capacity increases respectively.
JP3580378A 1978-03-27 1978-03-27 Semiconductor device Granted JPS54127684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3580378A JPS54127684A (en) 1978-03-27 1978-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3580378A JPS54127684A (en) 1978-03-27 1978-03-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54127684A true JPS54127684A (en) 1979-10-03
JPS6237547B2 JPS6237547B2 (en) 1987-08-13

Family

ID=12452072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3580378A Granted JPS54127684A (en) 1978-03-27 1978-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54127684A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577969A (en) * 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS6057659A (en) * 1983-09-09 1985-04-03 Hitachi Ltd Semiconductor integrated circuit device
JPS6144454A (en) * 1984-08-09 1986-03-04 Fujitsu Ltd Semiconductor device
JPS62193164A (en) * 1986-02-19 1987-08-25 Rohm Co Ltd Protective device of transistor
JPS6361152U (en) * 1986-10-13 1988-04-22

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143779A (en) * 1976-05-25 1977-11-30 Toshiba Corp Input protection circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143779A (en) * 1976-05-25 1977-11-30 Toshiba Corp Input protection circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577969A (en) * 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS6057659A (en) * 1983-09-09 1985-04-03 Hitachi Ltd Semiconductor integrated circuit device
JPH0478017B2 (en) * 1983-09-09 1992-12-10 Hitachi Ltd
JPS6144454A (en) * 1984-08-09 1986-03-04 Fujitsu Ltd Semiconductor device
JPH0345904B2 (en) * 1984-08-09 1991-07-12 Fujitsu Ltd
JPS62193164A (en) * 1986-02-19 1987-08-25 Rohm Co Ltd Protective device of transistor
JPS6361152U (en) * 1986-10-13 1988-04-22

Also Published As

Publication number Publication date
JPS6237547B2 (en) 1987-08-13

Similar Documents

Publication Publication Date Title
JPS5252593A (en) Semiconductor light receiving diode
US3020412A (en) Semiconductor photocells
JPS5676560A (en) Semiconductor device
JPS54127684A (en) Semiconductor device
JPS54101283A (en) Gate protective device
GB995727A (en) Improvements in or relating to semiconductor devices
JPS5297684A (en) Semiconductor element
JPS5785266A (en) Zener diode
JPS5538058A (en) Semiconductor device
JPS56150862A (en) Semiconductor device
JPS57139963A (en) Semiconductor device
JPS6484733A (en) Semiconductor device
JPS56147446A (en) Semiconductor integrated circuit device
JPS5513990A (en) Semiconductor device
JPS5588372A (en) Lateral type transistor
JPS5745283A (en) Semiconductor device
JPS54141578A (en) Semiconductor device
JPS5743454A (en) Semiconductor device
JPS54158182A (en) Variable capacity diode
JPS57183065A (en) Semiconductor integrated circuit device
JPS57113276A (en) Semiconductor memory device
JPS5339073A (en) Semiconductor device
JPS5646561A (en) Semiconductor device
JPS55103763A (en) Semiconductor device
GB1536764A (en) Semiconductor devices