JPS55103763A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55103763A JPS55103763A JP1062279A JP1062279A JPS55103763A JP S55103763 A JPS55103763 A JP S55103763A JP 1062279 A JP1062279 A JP 1062279A JP 1062279 A JP1062279 A JP 1062279A JP S55103763 A JPS55103763 A JP S55103763A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- side electrode
- junction
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain diode characteristics having a fixed resistance up to the breakdown voltage by providing a resistance layer which bypasses the PN junction and causing leakage current to flow in the resistance layer.
CONSTITUTION: On a PN junction consisting of N-type layer 2 and P-type layer 3 formed on the same main surface, insulating layer 5, N-side electrode 6 and P-side electrode 7 are formed. Next, resistance layer 8, made of metal or semiconductor, is formed on insulating layer 5, and both electrode layers 6 and 7 are connected.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1062279A JPS55103763A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1062279A JPS55103763A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55103763A true JPS55103763A (en) | 1980-08-08 |
Family
ID=11755313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1062279A Pending JPS55103763A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103763A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4607270A (en) * | 1983-06-16 | 1986-08-19 | Kabushiki Kaisha Toshiba | Schottky barrier diode with guard ring |
-
1979
- 1979-01-31 JP JP1062279A patent/JPS55103763A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4607270A (en) * | 1983-06-16 | 1986-08-19 | Kabushiki Kaisha Toshiba | Schottky barrier diode with guard ring |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6471163A (en) | Semiconductor device for protecting electrical excessive stress | |
JPS5252593A (en) | Semiconductor light receiving diode | |
JPS55102268A (en) | Protecting circuit for semiconductor device | |
JPS55102267A (en) | Semiconductor control element | |
JPS5511371A (en) | Semiconductor laser system | |
JPS55103763A (en) | Semiconductor device | |
JPS5635473A (en) | P-n junction type rectifying diode | |
JPS54112182A (en) | Semiconductor device | |
JPS566471A (en) | Field effect type thyristor | |
JPS55103764A (en) | Semiconductor device | |
JPS5585076A (en) | Manufacture of semi-conductor integrated circuit | |
JPS52129380A (en) | Semiconductor device | |
JPS5688376A (en) | Schottky barrier diode with p-n junction | |
JPS5556656A (en) | Semiconductor device | |
JPS57113276A (en) | Semiconductor memory device | |
JPS5544769A (en) | Semiconductor for large electric power | |
JPS5737884A (en) | Semiconductor device | |
JPS55128859A (en) | Surge preventive circuit for bipolar integrated circuit | |
JPS5773932A (en) | High tension-resisting planer-type semiconductor device | |
JPS54111290A (en) | Semiconductor device | |
JPS5457974A (en) | Thyristor with amplifying gate | |
JPS54132173A (en) | Schottky barrier diode | |
JPS5598859A (en) | Semiconductor switch | |
JPS56148864A (en) | Thyristor | |
JPS5563879A (en) | Semiconductor device |