JPS55103763A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55103763A
JPS55103763A JP1062279A JP1062279A JPS55103763A JP S55103763 A JPS55103763 A JP S55103763A JP 1062279 A JP1062279 A JP 1062279A JP 1062279 A JP1062279 A JP 1062279A JP S55103763 A JPS55103763 A JP S55103763A
Authority
JP
Japan
Prior art keywords
layer
resistance
side electrode
junction
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1062279A
Other languages
Japanese (ja)
Inventor
Keishiro Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP1062279A priority Critical patent/JPS55103763A/en
Publication of JPS55103763A publication Critical patent/JPS55103763A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain diode characteristics having a fixed resistance up to the breakdown voltage by providing a resistance layer which bypasses the PN junction and causing leakage current to flow in the resistance layer.
CONSTITUTION: On a PN junction consisting of N-type layer 2 and P-type layer 3 formed on the same main surface, insulating layer 5, N-side electrode 6 and P-side electrode 7 are formed. Next, resistance layer 8, made of metal or semiconductor, is formed on insulating layer 5, and both electrode layers 6 and 7 are connected.
COPYRIGHT: (C)1980,JPO&Japio
JP1062279A 1979-01-31 1979-01-31 Semiconductor device Pending JPS55103763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1062279A JPS55103763A (en) 1979-01-31 1979-01-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1062279A JPS55103763A (en) 1979-01-31 1979-01-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55103763A true JPS55103763A (en) 1980-08-08

Family

ID=11755313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1062279A Pending JPS55103763A (en) 1979-01-31 1979-01-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55103763A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607270A (en) * 1983-06-16 1986-08-19 Kabushiki Kaisha Toshiba Schottky barrier diode with guard ring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607270A (en) * 1983-06-16 1986-08-19 Kabushiki Kaisha Toshiba Schottky barrier diode with guard ring

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