JPS5585076A - Manufacture of semi-conductor integrated circuit - Google Patents

Manufacture of semi-conductor integrated circuit

Info

Publication number
JPS5585076A
JPS5585076A JP15748678A JP15748678A JPS5585076A JP S5585076 A JPS5585076 A JP S5585076A JP 15748678 A JP15748678 A JP 15748678A JP 15748678 A JP15748678 A JP 15748678A JP S5585076 A JPS5585076 A JP S5585076A
Authority
JP
Japan
Prior art keywords
type area
area
resistance element
zener diode
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15748678A
Other languages
Japanese (ja)
Inventor
Kazuo Hoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15748678A priority Critical patent/JPS5585076A/en
Publication of JPS5585076A publication Critical patent/JPS5585076A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form Zener diode and pinch resistance element into an integrated circuit under satisfactory correlation by beforehand making different the conductivity of an area constituting Zener diode and the conductivity of an area forming pinch resistance element.
CONSTITUTION: Zener diode D2 is composed of p-type area 5, p-type area 6 and n-type area 8. Zener voltage is determined by the forming conditions of pn-junction between p-type area 6 and n-type area 8. While pinch resistance element RP is constituted by a narrow long portion of p-type area 7 sandwiched between n-type area 2B and n-type area 10. Its resistance value is determined by the forming conditions of pn-junction between p-type area 7 and n-type area 10. As the forming conditions are the same, the Zener voltage of Zener diode DZ and the resistance value of pinch resistance element RP have close correlation with each other.
COPYRIGHT: (C)1980,JPO&Japio
JP15748678A 1978-12-22 1978-12-22 Manufacture of semi-conductor integrated circuit Pending JPS5585076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15748678A JPS5585076A (en) 1978-12-22 1978-12-22 Manufacture of semi-conductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15748678A JPS5585076A (en) 1978-12-22 1978-12-22 Manufacture of semi-conductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5585076A true JPS5585076A (en) 1980-06-26

Family

ID=15650724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15748678A Pending JPS5585076A (en) 1978-12-22 1978-12-22 Manufacture of semi-conductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5585076A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit

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