JPS5571075A - Zener diode - Google Patents
Zener diodeInfo
- Publication number
- JPS5571075A JPS5571075A JP14420578A JP14420578A JPS5571075A JP S5571075 A JPS5571075 A JP S5571075A JP 14420578 A JP14420578 A JP 14420578A JP 14420578 A JP14420578 A JP 14420578A JP S5571075 A JPS5571075 A JP S5571075A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- voltage
- transistor
- temperature
- npn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To compensate temperature characteristics and to reduce a temperature coefficient by making a transistor part "on" with a backward current after making PN-junction to yield.
CONSTITUTION: When the voltage is impressed on the terminals 9, 10, PN-junction D between the regions 1-5 yields first and with the increasing voltage a voltage drop appears due to the resistance R of the region 2 of the base layer and a part under the NPN-transistor consisting of the regions 6-2-4 performs an "on" operation. The temperature characteristics of the PN-junction is positive, while the temperature characteristic of the threshold value voltage VBE between Base-Emittor under the NPN-transistor is negative. Consequently both of them compensate each other thus to reduce the temperature coefficient.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14420578A JPS5571075A (en) | 1978-11-24 | 1978-11-24 | Zener diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14420578A JPS5571075A (en) | 1978-11-24 | 1978-11-24 | Zener diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5571075A true JPS5571075A (en) | 1980-05-28 |
Family
ID=15356660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14420578A Pending JPS5571075A (en) | 1978-11-24 | 1978-11-24 | Zener diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5571075A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4599631A (en) * | 1982-10-12 | 1986-07-08 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor apparatus having a zener diode integral with a resistor-transistor combination |
JPS6269686A (en) * | 1985-09-24 | 1987-03-30 | Rohm Co Ltd | Semiconductor device |
JPH02185069A (en) * | 1988-12-02 | 1990-07-19 | Motorola Inc | Semiconductor device having high-energy stopping power and temperature-compensated stopping voltage |
-
1978
- 1978-11-24 JP JP14420578A patent/JPS5571075A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4599631A (en) * | 1982-10-12 | 1986-07-08 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor apparatus having a zener diode integral with a resistor-transistor combination |
JPS6269686A (en) * | 1985-09-24 | 1987-03-30 | Rohm Co Ltd | Semiconductor device |
JPH02185069A (en) * | 1988-12-02 | 1990-07-19 | Motorola Inc | Semiconductor device having high-energy stopping power and temperature-compensated stopping voltage |
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