JPS5571075A - Zener diode - Google Patents

Zener diode

Info

Publication number
JPS5571075A
JPS5571075A JP14420578A JP14420578A JPS5571075A JP S5571075 A JPS5571075 A JP S5571075A JP 14420578 A JP14420578 A JP 14420578A JP 14420578 A JP14420578 A JP 14420578A JP S5571075 A JPS5571075 A JP S5571075A
Authority
JP
Japan
Prior art keywords
junction
voltage
transistor
temperature
npn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14420578A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14420578A priority Critical patent/JPS5571075A/en
Publication of JPS5571075A publication Critical patent/JPS5571075A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To compensate temperature characteristics and to reduce a temperature coefficient by making a transistor part "on" with a backward current after making PN-junction to yield.
CONSTITUTION: When the voltage is impressed on the terminals 9, 10, PN-junction D between the regions 1-5 yields first and with the increasing voltage a voltage drop appears due to the resistance R of the region 2 of the base layer and a part under the NPN-transistor consisting of the regions 6-2-4 performs an "on" operation. The temperature characteristics of the PN-junction is positive, while the temperature characteristic of the threshold value voltage VBE between Base-Emittor under the NPN-transistor is negative. Consequently both of them compensate each other thus to reduce the temperature coefficient.
COPYRIGHT: (C)1980,JPO&Japio
JP14420578A 1978-11-24 1978-11-24 Zener diode Pending JPS5571075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14420578A JPS5571075A (en) 1978-11-24 1978-11-24 Zener diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14420578A JPS5571075A (en) 1978-11-24 1978-11-24 Zener diode

Publications (1)

Publication Number Publication Date
JPS5571075A true JPS5571075A (en) 1980-05-28

Family

ID=15356660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14420578A Pending JPS5571075A (en) 1978-11-24 1978-11-24 Zener diode

Country Status (1)

Country Link
JP (1) JPS5571075A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599631A (en) * 1982-10-12 1986-07-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor apparatus having a zener diode integral with a resistor-transistor combination
JPS6269686A (en) * 1985-09-24 1987-03-30 Rohm Co Ltd Semiconductor device
JPH02185069A (en) * 1988-12-02 1990-07-19 Motorola Inc Semiconductor device having high-energy stopping power and temperature-compensated stopping voltage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599631A (en) * 1982-10-12 1986-07-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor apparatus having a zener diode integral with a resistor-transistor combination
JPS6269686A (en) * 1985-09-24 1987-03-30 Rohm Co Ltd Semiconductor device
JPH02185069A (en) * 1988-12-02 1990-07-19 Motorola Inc Semiconductor device having high-energy stopping power and temperature-compensated stopping voltage

Similar Documents

Publication Publication Date Title
JPS5485366A (en) Semiconductor integrated circuit for constant voltage
JPS564818A (en) Reference voltage circuit
JPS5571075A (en) Zener diode
JPS5232278A (en) Semiconductor device
JPS5320554A (en) Constant current circuit
JPS54880A (en) Manufacture of semiconductor device
JPS5538746A (en) Temperature compensating method for intermediate tone recording
JPS54101346A (en) Resistance value-voltage converting circuit
JPS57141957A (en) Bipolar transistor
JPS5344154A (en) Current split circuit
JPS5248986A (en) Semiconductor temperature sensitive switch element
JPS5585076A (en) Manufacture of semi-conductor integrated circuit
JPS5263682A (en) Production of mesa type transistor
JPS5598873A (en) Temperature compensated type constant-voltage diode
JPS53108778A (en) Transistor
JPS5595122A (en) Constant current circuit
JPS5479575A (en) Semiconductor integrated-circuit device
JPS5473547A (en) Integrating a/d conversion current circuit
JPS5257791A (en) Photo transistor circuit with temperature compensation
JPS5378188A (en) Photo semiconductor device
JPS55146521A (en) Constant-current circuit
JPS5587476A (en) Semiconductor device
JPS57184251A (en) Semiconductor element with control electrode
JPS5556214A (en) Voltage stabilizer circuit
JPS5571321A (en) Clip circuit