JPS5320872A - Production of impatt diode - Google Patents

Production of impatt diode

Info

Publication number
JPS5320872A
JPS5320872A JP9556376A JP9556376A JPS5320872A JP S5320872 A JPS5320872 A JP S5320872A JP 9556376 A JP9556376 A JP 9556376A JP 9556376 A JP9556376 A JP 9556376A JP S5320872 A JPS5320872 A JP S5320872A
Authority
JP
Japan
Prior art keywords
production
impatt diode
layer
substrate
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9556376A
Other languages
Japanese (ja)
Other versions
JPS5728959B2 (en
Inventor
Masamichi Omori
Takashi Makimura
Tadao Ishibashi
Masayuki Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9556376A priority Critical patent/JPS5320872A/en
Publication of JPS5320872A publication Critical patent/JPS5320872A/en
Publication of JPS5728959B2 publication Critical patent/JPS5728959B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To make equivalent series resistance sufficiently small by laminating a low impurity concentration layer on the substrate of a high impurity concentration, making a desired pn layer theeon and removing the substrate and low concentration layer through selective etching.
COPYRIGHT: (C)1978,JPO&Japio
JP9556376A 1976-08-11 1976-08-11 Production of impatt diode Granted JPS5320872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9556376A JPS5320872A (en) 1976-08-11 1976-08-11 Production of impatt diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9556376A JPS5320872A (en) 1976-08-11 1976-08-11 Production of impatt diode

Publications (2)

Publication Number Publication Date
JPS5320872A true JPS5320872A (en) 1978-02-25
JPS5728959B2 JPS5728959B2 (en) 1982-06-19

Family

ID=14141047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9556376A Granted JPS5320872A (en) 1976-08-11 1976-08-11 Production of impatt diode

Country Status (1)

Country Link
JP (1) JPS5320872A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49121592U (en) * 1973-02-12 1974-10-17
US4983251A (en) * 1985-06-20 1991-01-08 U.S. Philips Corporation Method of manufacturing semiconductor devices
WO1996039712A1 (en) * 1995-06-06 1996-12-12 The Regents Of The University Of California Silicon on insulator achieved using electrochemical etching

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134972U (en) * 1984-02-21 1985-09-07 株式会社　森田鉄工所 switching valve

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49121592U (en) * 1973-02-12 1974-10-17
JPS5634291Y2 (en) * 1973-02-12 1981-08-13
US4983251A (en) * 1985-06-20 1991-01-08 U.S. Philips Corporation Method of manufacturing semiconductor devices
WO1996039712A1 (en) * 1995-06-06 1996-12-12 The Regents Of The University Of California Silicon on insulator achieved using electrochemical etching
US5674758A (en) * 1995-06-06 1997-10-07 Regents Of The University Of California Silicon on insulator achieved using electrochemical etching

Also Published As

Publication number Publication date
JPS5728959B2 (en) 1982-06-19

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