JPS5536941A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5536941A JPS5536941A JP10881078A JP10881078A JPS5536941A JP S5536941 A JPS5536941 A JP S5536941A JP 10881078 A JP10881078 A JP 10881078A JP 10881078 A JP10881078 A JP 10881078A JP S5536941 A JPS5536941 A JP S5536941A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layers
- zener diode
- distribution
- equal
- impurity density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To minimize a deviation of manufacturing conditions and an influence of working temperatures by forming a constant current circuit with resistor and Zener diode having such diffusion layers as are equal in impurity density and distribution.
CONSTITUTION: P-type diffusion layers 2 and 3 are formed on the surface of N-type semiconductor substrate 1, and diffusion layers 4a and 4b which are equal in impurity density and distribution are formed on the diffusion layers 2, 3 respectively. Thus zener diode is constituted between the diffusion layers 2 and 4a. On the other hand, a resistance is constituted between the diffusion layers 3 and 4b. Then, the diffusion layers 2 and 3 are connected electrically, a load is connected between the diffusion layers 4a, 4b, and a voltage is applied between both terminals of Zener diode. Where the voltage exceeds Zener voltage of the Zener diode, a current flowing in the load can be kept constant. Furthermore, since the diffusion layers 4a and 4b are equal in impurity density and distribution, an influence of change in manufacturing conditions or temperatures can be minimized.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10881078A JPS5536941A (en) | 1978-09-04 | 1978-09-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10881078A JPS5536941A (en) | 1978-09-04 | 1978-09-04 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5536941A true JPS5536941A (en) | 1980-03-14 |
Family
ID=14494057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10881078A Pending JPS5536941A (en) | 1978-09-04 | 1978-09-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5536941A (en) |
-
1978
- 1978-09-04 JP JP10881078A patent/JPS5536941A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5710992A (en) | Semiconductor device and manufacture therefor | |
| GB923104A (en) | Improvements in or relating to semiconductive devices | |
| JPS5676560A (en) | Semiconductor device | |
| JPS55102268A (en) | Protecting circuit for semiconductor device | |
| JPS5536941A (en) | Semiconductor device | |
| US3631313A (en) | Resistor for integrated circuit | |
| JPS5232278A (en) | Semiconductor device | |
| JPS6484733A (en) | Semiconductor device | |
| JPS5326686A (en) | Protection circuit device for semi conductor | |
| JPS57139963A (en) | Semiconductor device | |
| JPS57162356A (en) | Integrated circuit device | |
| JPS6468961A (en) | Resistance element for semiconductor integrated circuit device | |
| JPS5598873A (en) | Temperature compensated type constant-voltage diode | |
| JPS57141951A (en) | Semiconductor integrated circuit | |
| JPS5585076A (en) | Manufacture of semi-conductor integrated circuit | |
| JPS5693350A (en) | Armor of semiconductor device | |
| JPS55103763A (en) | Semiconductor device | |
| US3211923A (en) | Integrated semiconductor tunnel diode and resistance | |
| JPS5513935A (en) | Glass for covering semiconductor | |
| JPS5598860A (en) | Semiconductor switch | |
| JPS5635454A (en) | Semiconductor device | |
| JPS55140263A (en) | Surge preventive circuit for bipolar integrated circuit | |
| JPS5778164A (en) | Diffused resistor for semiconductor integrated circuit | |
| JPS553660A (en) | Solar cell | |
| JPS5734356A (en) | Semiconductor device |