JPS5635473A - P-n junction type rectifying diode - Google Patents

P-n junction type rectifying diode

Info

Publication number
JPS5635473A
JPS5635473A JP11010679A JP11010679A JPS5635473A JP S5635473 A JPS5635473 A JP S5635473A JP 11010679 A JP11010679 A JP 11010679A JP 11010679 A JP11010679 A JP 11010679A JP S5635473 A JPS5635473 A JP S5635473A
Authority
JP
Japan
Prior art keywords
layer
voltage
type
junction
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11010679A
Other languages
Japanese (ja)
Inventor
Yoshihito Amamiya
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11010679A priority Critical patent/JPS5635473A/en
Publication of JPS5635473A publication Critical patent/JPS5635473A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the diode which has preferable reverse characteristics and low positive voltage drop by coating a P<+> type layer in island shape on an N type layer on an N<+> type layer and coating Pt thereon. CONSTITUTION:The islandlike P<+> type layer 4 is formed on the N type epitaxial layer 2 on the N<+> type layer 1, the Pt layer 8 is deposited thereon, and a Schottky junction is formed between the layer 8 and the layer 2. Ni electrodes 5, 6 are formed respectively on the layers 1 and 8. When a voltage is appleid between the electrodes 6 and 5 and a forward voltage is applied to the P-N junction 3, the forward current will flow in parallel with the P-N junction and the Schottky junction 7. According to this configuration, electrons are injected from the layer 1 to the layer 2, while holes are injected from the layer 4, in case of flowing the forward current, a conductivity modulation occurs in the layer 2, and the resistance of the layer 2 is produced. Accordingly, a forward current will flow with sufficiently low voltage as compared with the forward voltage drop of the Schottky junction itself, and yet sufficiently high withstand voltage and low reverse current will be retained in reverse direction.
JP11010679A 1979-08-29 1979-08-29 P-n junction type rectifying diode Pending JPS5635473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11010679A JPS5635473A (en) 1979-08-29 1979-08-29 P-n junction type rectifying diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11010679A JPS5635473A (en) 1979-08-29 1979-08-29 P-n junction type rectifying diode

Publications (1)

Publication Number Publication Date
JPS5635473A true JPS5635473A (en) 1981-04-08

Family

ID=14527184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11010679A Pending JPS5635473A (en) 1979-08-29 1979-08-29 P-n junction type rectifying diode

Country Status (1)

Country Link
JP (1) JPS5635473A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4720734A (en) * 1981-09-11 1988-01-19 Nippon Telegraph And Telephone Public Corporation Low loss and high speed diodes
US4911495A (en) * 1988-03-11 1990-03-27 Honda Giken Kogyo Kabushiki Kaisha Side sill structure for automobile
US5017976A (en) * 1988-12-02 1991-05-21 Kabushiki Kaisha Toshiba Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application
US5101244A (en) * 1990-02-28 1992-03-31 Hitachi, Ltd. Semiconductor schottky device with pn regions
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
EP0750346A1 (en) * 1995-06-22 1996-12-27 STMicroelectronics S.A. Monolithic assembly of semiconductor components including a high-speed diode
EP0821411A1 (en) * 1996-07-26 1998-01-28 STMicroelectronics S.A. Monolithic assembly of an IGBT transistor and a fast diode
CN105470314A (en) * 2014-09-12 2016-04-06 天津职业技术师范大学 Si/NiO:Al pn junction diode

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720734A (en) * 1981-09-11 1988-01-19 Nippon Telegraph And Telephone Public Corporation Low loss and high speed diodes
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4911495A (en) * 1988-03-11 1990-03-27 Honda Giken Kogyo Kabushiki Kaisha Side sill structure for automobile
US5017976A (en) * 1988-12-02 1991-05-21 Kabushiki Kaisha Toshiba Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application
US5101244A (en) * 1990-02-28 1992-03-31 Hitachi, Ltd. Semiconductor schottky device with pn regions
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
EP0750346A1 (en) * 1995-06-22 1996-12-27 STMicroelectronics S.A. Monolithic assembly of semiconductor components including a high-speed diode
FR2735907A1 (en) * 1995-06-22 1996-12-27 Sgs Thomson Microelectronics MONOLITIC ASSEMBLY OF SEMICONDUCTOR COMPONENTS INCLUDING A FAST DIODE
EP0821411A1 (en) * 1996-07-26 1998-01-28 STMicroelectronics S.A. Monolithic assembly of an IGBT transistor and a fast diode
CN105470314A (en) * 2014-09-12 2016-04-06 天津职业技术师范大学 Si/NiO:Al pn junction diode

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