JPS5499579A - Two terminals reverse conducting thyristor - Google Patents

Two terminals reverse conducting thyristor

Info

Publication number
JPS5499579A
JPS5499579A JP633278A JP633278A JPS5499579A JP S5499579 A JPS5499579 A JP S5499579A JP 633278 A JP633278 A JP 633278A JP 633278 A JP633278 A JP 633278A JP S5499579 A JPS5499579 A JP S5499579A
Authority
JP
Japan
Prior art keywords
layer
thyristor
region
diode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP633278A
Other languages
Japanese (ja)
Other versions
JPS5932070B2 (en
Inventor
Hiroshi Gamo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP633278A priority Critical patent/JPS5932070B2/en
Publication of JPS5499579A publication Critical patent/JPS5499579A/en
Publication of JPS5932070B2 publication Critical patent/JPS5932070B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enhance the current/voltage characteristics by providing the region featuring a breakover voltage lower than that at the diode part at the edge of the thyristor part opposite to the diode part of the diode reverse conducting thyristor in which the diode part and the thyristor part are provided in parallel. CONSTITUTION:P-type base layer 2 and N-type base layer 3 are formed adjacently, and N-type emitter layer 4 is formed at the fixed region on the surface of layer 2. At the same time, P-type emitter layer 5 is formed on the surface of layer 3 and opposing to layer 4. Thus, thyristor element 1 is obtained. Then cathode electrode 6 is coated covering layer 2 and 4, and also anode electrode 7 is coated covering layer 3 and 7. The part where region 4 and 5 are provided is used as thyristor part T, and other parts are used as diode part D each. In addition, N<+>-type region 8 is provided newly at the border area between layer 2 and 3 and at the edge of part T opposite to part D. As a result, the resistance is reduced at the negative resistance region, improving the characteristics.
JP633278A 1978-01-23 1978-01-23 2-terminal reverse conduction thyristor Expired JPS5932070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP633278A JPS5932070B2 (en) 1978-01-23 1978-01-23 2-terminal reverse conduction thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP633278A JPS5932070B2 (en) 1978-01-23 1978-01-23 2-terminal reverse conduction thyristor

Publications (2)

Publication Number Publication Date
JPS5499579A true JPS5499579A (en) 1979-08-06
JPS5932070B2 JPS5932070B2 (en) 1984-08-06

Family

ID=11635397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP633278A Expired JPS5932070B2 (en) 1978-01-23 1978-01-23 2-terminal reverse conduction thyristor

Country Status (1)

Country Link
JP (1) JPS5932070B2 (en)

Also Published As

Publication number Publication date
JPS5932070B2 (en) 1984-08-06

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