JPS567474A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS567474A JPS567474A JP8214779A JP8214779A JPS567474A JP S567474 A JPS567474 A JP S567474A JP 8214779 A JP8214779 A JP 8214779A JP 8214779 A JP8214779 A JP 8214779A JP S567474 A JPS567474 A JP S567474A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- short
- emitter
- holes
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To stabilize the width of a base layer, in a thyristor having an emitter provided with a plurality of emitter short-circuit holes, increasing the diameter of two or more of these short-circuit holes and separating emitters therein. CONSTITUTION:An N-type base layer 22 is grown on a P-type emitter substrate 21 which forms an anode region, and a P-type base layer 23 is laminated and formed thereon. Then, an N<+>-type emitter 24 which becomes a cathode region is diffused and formed in the layer 23 and a plurality of emitter short-circuit holes 25 are formed therein. The surface of the layer 23 is exposed therein to form a thyristor having short-circuit holes 25. In this constitution. two or more holes 26 of these holes 25 have a large diameter, and the surface of the layer 23 is exposed similarly. Upon this occasion further a short-circuit hole 27 is formed in the hole 26 and an N<+>-type emitter layer 28 independent from the layer 24 is provided therein. Thereafter, if an In-Ga layer 29 is connected to a predetermined voltage V is applied to the layer 28, a value of a current flowing in the layer 23 does not change due to the area of the layer 29.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8214779A JPS6046552B2 (en) | 1979-06-29 | 1979-06-29 | thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8214779A JPS6046552B2 (en) | 1979-06-29 | 1979-06-29 | thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS567474A true JPS567474A (en) | 1981-01-26 |
| JPS6046552B2 JPS6046552B2 (en) | 1985-10-16 |
Family
ID=13766316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8214779A Expired JPS6046552B2 (en) | 1979-06-29 | 1979-06-29 | thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046552B2 (en) |
-
1979
- 1979-06-29 JP JP8214779A patent/JPS6046552B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6046552B2 (en) | 1985-10-16 |
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