FR2428918A1 - Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79) - Google Patents

Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79)

Info

Publication number
FR2428918A1
FR2428918A1 FR7915122A FR7915122A FR2428918A1 FR 2428918 A1 FR2428918 A1 FR 2428918A1 FR 7915122 A FR7915122 A FR 7915122A FR 7915122 A FR7915122 A FR 7915122A FR 2428918 A1 FR2428918 A1 FR 2428918A1
Authority
FR
France
Prior art keywords
emitter
region
switching transistor
twin
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7915122A
Other languages
French (fr)
Other versions
FR2428918B1 (en
Inventor
Peter Orville Shafer
Elden Duane Wolley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2428918A1 publication Critical patent/FR2428918A1/en
Application granted granted Critical
Publication of FR2428918B1 publication Critical patent/FR2428918B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

The switching transistor has a selective short-circuited anode emitter to reduce the current flow when switched on. The central section has one or more emitter fingers formed by a mesh of grid and cathode emitter structure. The current carrying capacity is relatively high. There is a first emitter region (12) of a given conductivity on a first suface. A first base region (14) of a second type conductivity near to the cathode region (22) forming a PN junction. There is a second base region on a second surface with a control region. The second emitter region is short-circuited.
FR7915122A 1978-06-14 1979-06-13 Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79) Granted FR2428918A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91556378A 1978-06-14 1978-06-14

Publications (2)

Publication Number Publication Date
FR2428918A1 true FR2428918A1 (en) 1980-01-11
FR2428918B1 FR2428918B1 (en) 1984-06-29

Family

ID=25435941

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7915122A Granted FR2428918A1 (en) 1978-06-14 1979-06-13 Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79)

Country Status (4)

Country Link
JP (1) JPS5516497A (en)
DE (1) DE2923693A1 (en)
FR (1) FR2428918A1 (en)
NL (1) NL190389C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0061046A1 (en) * 1981-03-14 1982-09-29 Semikron, Gesellschaft Für Gleichrichterbau Und Elektronik M.B.H. Reversely non-conducting thyristor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150120U (en) * 1981-03-17 1982-09-21
DE3531631A1 (en) * 1985-09-05 1987-03-05 Licentia Gmbh ASYMMETRIC THYRISTOR AND METHOD FOR THE PRODUCTION THEREOF
DE3742638A1 (en) * 1987-12-16 1989-06-29 Semikron Elektronik Gmbh GTO thyristor
JPH02124295A (en) * 1988-10-28 1990-05-11 Ushio Kk Multishaft boring device
DE4218398A1 (en) * 1992-06-04 1993-12-09 Asea Brown Boveri High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3513367A (en) * 1968-03-06 1970-05-19 Westinghouse Electric Corp High current gate controlled switches
FR2043541A7 (en) * 1969-05-20 1971-02-19 Bbc Brown Boveri & Cie
DE2041727A1 (en) * 1969-08-27 1971-03-04 Westinghouse Electric Corp Switching device controllable by means of a gate electrode
DE2056806A1 (en) * 1970-11-02 1972-05-25 Bbc Brown Boveri & Cie Bistable semiconductor component
DE2217604A1 (en) * 1971-04-13 1972-11-16 Sony Corp., Tokio Gate-controlled semiconductor switch
FR2164901A1 (en) * 1971-12-24 1973-08-03 Semikron Gleichrichterbau
FR2284193A1 (en) * 1974-09-06 1976-04-02 Rca Corp Semiconductor rectifier module - with gate control and low cut off current, has regenerative and non-regenerative section electrodes on separated surfaces
FR2367354A1 (en) * 1976-10-08 1978-05-05 Bbc Brown Boveri & Cie THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
US3914781A (en) * 1971-04-13 1975-10-21 Sony Corp Gate controlled rectifier
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3513367A (en) * 1968-03-06 1970-05-19 Westinghouse Electric Corp High current gate controlled switches
FR2043541A7 (en) * 1969-05-20 1971-02-19 Bbc Brown Boveri & Cie
DE2041727A1 (en) * 1969-08-27 1971-03-04 Westinghouse Electric Corp Switching device controllable by means of a gate electrode
DE2056806A1 (en) * 1970-11-02 1972-05-25 Bbc Brown Boveri & Cie Bistable semiconductor component
DE2217604A1 (en) * 1971-04-13 1972-11-16 Sony Corp., Tokio Gate-controlled semiconductor switch
FR2164901A1 (en) * 1971-12-24 1973-08-03 Semikron Gleichrichterbau
FR2284193A1 (en) * 1974-09-06 1976-04-02 Rca Corp Semiconductor rectifier module - with gate control and low cut off current, has regenerative and non-regenerative section electrodes on separated surfaces
FR2367354A1 (en) * 1976-10-08 1978-05-05 Bbc Brown Boveri & Cie THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0061046A1 (en) * 1981-03-14 1982-09-29 Semikron, Gesellschaft Für Gleichrichterbau Und Elektronik M.B.H. Reversely non-conducting thyristor

Also Published As

Publication number Publication date
DE2923693C2 (en) 1990-12-06
NL7904589A (en) 1979-12-18
NL190389C (en) 1994-02-01
JPS6220713B2 (en) 1987-05-08
FR2428918B1 (en) 1984-06-29
JPS5516497A (en) 1980-02-05
DE2923693A1 (en) 1980-01-03
NL190389B (en) 1993-09-01

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