NL7904589A - LOCK TRANSISTOR. - Google Patents

LOCK TRANSISTOR.

Info

Publication number
NL7904589A
NL7904589A NL7904589A NL7904589A NL7904589A NL 7904589 A NL7904589 A NL 7904589A NL 7904589 A NL7904589 A NL 7904589A NL 7904589 A NL7904589 A NL 7904589A NL 7904589 A NL7904589 A NL 7904589A
Authority
NL
Netherlands
Prior art keywords
lock transistor
transistor
lock
Prior art date
Application number
NL7904589A
Other languages
Dutch (nl)
Other versions
NL190389B (en
NL190389C (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL7904589A publication Critical patent/NL7904589A/en
Publication of NL190389B publication Critical patent/NL190389B/en
Application granted granted Critical
Publication of NL190389C publication Critical patent/NL190389C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
NL7904589A 1978-06-14 1979-06-12 GATE-SWITCHABLE THYRISTOR. NL190389C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91556378A 1978-06-14 1978-06-14

Publications (3)

Publication Number Publication Date
NL7904589A true NL7904589A (en) 1979-12-18
NL190389B NL190389B (en) 1993-09-01
NL190389C NL190389C (en) 1994-02-01

Family

ID=25435941

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7904589A NL190389C (en) 1978-06-14 1979-06-12 GATE-SWITCHABLE THYRISTOR.

Country Status (4)

Country Link
JP (1) JPS5516497A (en)
DE (1) DE2923693A1 (en)
FR (1) FR2428918A1 (en)
NL (1) NL190389C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3109892A1 (en) * 1981-03-14 1982-09-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg REVERSE NON-LOCKING THYRISTOR WITH SHORT RELEASE TIME
JPS57150120U (en) * 1981-03-17 1982-09-21
DE3531631A1 (en) * 1985-09-05 1987-03-05 Licentia Gmbh ASYMMETRIC THYRISTOR AND METHOD FOR THE PRODUCTION THEREOF
DE3742638A1 (en) * 1987-12-16 1989-06-29 Semikron Elektronik Gmbh GTO thyristor
JPH02124295A (en) * 1988-10-28 1990-05-11 Ushio Kk Multishaft boring device
DE4218398A1 (en) * 1992-06-04 1993-12-09 Asea Brown Boveri High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
NL165333C (en) * 1969-05-20 Bbc Brown Boveri & Cie STEERABLE SEMICONDUCTOR ELEMENT WITH FOUR LAYERED ZONES OF ALTERNATE GUIDE TYPE.
BE755356A (en) * 1969-08-27 1971-03-01 Westinghouse Electric Corp SEMI-CONDUCTIVE SWITCH WITH HIGH CURRENT CONTROL GRID
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
CH526859A (en) * 1970-11-02 1972-08-15 Bbc Brown Boveri & Cie Bistable semiconductor component
US3914781A (en) * 1971-04-13 1975-10-21 Sony Corp Gate controlled rectifier
DE2164644C3 (en) * 1971-12-24 1979-09-27 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Controllable semiconductor rectifier
IT1041931B (en) * 1974-09-06 1980-01-10 Rca Corp SEMICONDUCTIVE RECTIFIER SWITCHED TO THE NON-CONDUCTIVE STATE BY MEANS OF A VOLTAGE APPLIED TO ITS DOOR ELECTRODE
CH598696A5 (en) * 1976-10-08 1978-05-12 Bbc Brown Boveri & Cie
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear

Also Published As

Publication number Publication date
NL190389B (en) 1993-09-01
DE2923693C2 (en) 1990-12-06
NL190389C (en) 1994-02-01
FR2428918A1 (en) 1980-01-11
DE2923693A1 (en) 1980-01-03
JPS6220713B2 (en) 1987-05-08
JPS5516497A (en) 1980-02-05
FR2428918B1 (en) 1984-06-29

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
BC A request for examination has been filed
BV The patent application has lapsed