NL190389C - GATE-SWITCHABLE THYRISTOR. - Google Patents
GATE-SWITCHABLE THYRISTOR.Info
- Publication number
- NL190389C NL190389C NL7904589A NL7904589A NL190389C NL 190389 C NL190389 C NL 190389C NL 7904589 A NL7904589 A NL 7904589A NL 7904589 A NL7904589 A NL 7904589A NL 190389 C NL190389 C NL 190389C
- Authority
- NL
- Netherlands
- Prior art keywords
- gate
- switchable thyristor
- thyristor
- switchable
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US91556378A | 1978-06-14 | 1978-06-14 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7904589A NL7904589A (en) | 1979-12-18 |
| NL190389B NL190389B (en) | 1993-09-01 |
| NL190389C true NL190389C (en) | 1994-02-01 |
Family
ID=25435941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7904589A NL190389C (en) | 1978-06-14 | 1979-06-12 | GATE-SWITCHABLE THYRISTOR. |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5516497A (en) |
| DE (1) | DE2923693A1 (en) |
| FR (1) | FR2428918A1 (en) |
| NL (1) | NL190389C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3109892A1 (en) * | 1981-03-14 | 1982-09-23 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | REVERSE NON-LOCKING THYRISTOR WITH SHORT RELEASE TIME |
| JPS57150120U (en) * | 1981-03-17 | 1982-09-21 | ||
| DE3531631A1 (en) * | 1985-09-05 | 1987-03-05 | Licentia Gmbh | ASYMMETRIC THYRISTOR AND METHOD FOR THE PRODUCTION THEREOF |
| DE3742638A1 (en) * | 1987-12-16 | 1989-06-29 | Semikron Elektronik Gmbh | GTO thyristor |
| JPH02124295A (en) * | 1988-10-28 | 1990-05-11 | Ushio Kk | Multishaft boring device |
| DE4218398A1 (en) * | 1992-06-04 | 1993-12-09 | Asea Brown Boveri | High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
| GB1196576A (en) * | 1968-03-06 | 1970-07-01 | Westinghouse Electric Corp | High Current Gate Controlled Switches |
| NL165333C (en) * | 1969-05-20 | Bbc Brown Boveri & Cie | STEERABLE SEMICONDUCTOR ELEMENT WITH FOUR LAYERED ZONES OF ALTERNATE GUIDE TYPE. | |
| BE755356A (en) * | 1969-08-27 | 1971-03-01 | Westinghouse Electric Corp | SEMI-CONDUCTIVE SWITCH WITH HIGH CURRENT CONTROL GRID |
| US3619738A (en) * | 1969-10-13 | 1971-11-09 | Tokyo Shibaura Electric Co | Semiconductor device with improved connection to control electrode region |
| CH526859A (en) * | 1970-11-02 | 1972-08-15 | Bbc Brown Boveri & Cie | Bistable semiconductor component |
| US3914781A (en) * | 1971-04-13 | 1975-10-21 | Sony Corp | Gate controlled rectifier |
| DE2164644C3 (en) * | 1971-12-24 | 1979-09-27 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Controllable semiconductor rectifier |
| IT1041931B (en) * | 1974-09-06 | 1980-01-10 | Rca Corp | SEMICONDUCTIVE RECTIFIER SWITCHED TO THE NON-CONDUCTIVE STATE BY MEANS OF A VOLTAGE APPLIED TO ITS DOOR ELECTRODE |
| CH598696A5 (en) * | 1976-10-08 | 1978-05-12 | Bbc Brown Boveri & Cie | |
| JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
-
1979
- 1979-06-12 JP JP7310879A patent/JPS5516497A/en active Granted
- 1979-06-12 NL NL7904589A patent/NL190389C/en not_active Application Discontinuation
- 1979-06-12 DE DE19792923693 patent/DE2923693A1/en active Granted
- 1979-06-13 FR FR7915122A patent/FR2428918A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL7904589A (en) | 1979-12-18 |
| JPS6220713B2 (en) | 1987-05-08 |
| DE2923693A1 (en) | 1980-01-03 |
| NL190389B (en) | 1993-09-01 |
| JPS5516497A (en) | 1980-02-05 |
| FR2428918A1 (en) | 1980-01-11 |
| DE2923693C2 (en) | 1990-12-06 |
| FR2428918B1 (en) | 1984-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |