NL190389C - Poort-uitschakelbare thyristor. - Google Patents

Poort-uitschakelbare thyristor.

Info

Publication number
NL190389C
NL190389C NL7904589A NL7904589A NL190389C NL 190389 C NL190389 C NL 190389C NL 7904589 A NL7904589 A NL 7904589A NL 7904589 A NL7904589 A NL 7904589A NL 190389 C NL190389 C NL 190389C
Authority
NL
Netherlands
Prior art keywords
gate
switchable thyristor
thyristor
switchable
Prior art date
Application number
NL7904589A
Other languages
English (en)
Other versions
NL7904589A (nl
NL190389B (nl
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL7904589A publication Critical patent/NL7904589A/nl
Publication of NL190389B publication Critical patent/NL190389B/nl
Application granted granted Critical
Publication of NL190389C publication Critical patent/NL190389C/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
NL7904589A 1978-06-14 1979-06-12 Poort-uitschakelbare thyristor. NL190389C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91556378A 1978-06-14 1978-06-14

Publications (3)

Publication Number Publication Date
NL7904589A NL7904589A (nl) 1979-12-18
NL190389B NL190389B (nl) 1993-09-01
NL190389C true NL190389C (nl) 1994-02-01

Family

ID=25435941

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7904589A NL190389C (nl) 1978-06-14 1979-06-12 Poort-uitschakelbare thyristor.

Country Status (4)

Country Link
JP (1) JPS5516497A (nl)
DE (1) DE2923693A1 (nl)
FR (1) FR2428918A1 (nl)
NL (1) NL190389C (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3109892A1 (de) * 1981-03-14 1982-09-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Rueckwaerts nicht sperrender thyristor mit kurzer freiwerdezeit
JPS57150120U (nl) * 1981-03-17 1982-09-21
DE3531631A1 (de) * 1985-09-05 1987-03-05 Licentia Gmbh Asymmetrischer thyristor und verfahren zu seiner herstellung
DE3742638A1 (de) * 1987-12-16 1989-06-29 Semikron Elektronik Gmbh Gto-thyristor
JPH02124295A (ja) * 1988-10-28 1990-05-11 Ushio Kk 多軸穿孔装置
DE4218398A1 (de) * 1992-06-04 1993-12-09 Asea Brown Boveri Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
NL165333C (nl) * 1969-05-20 Bbc Brown Boveri & Cie Bestuurbaar halfgeleiderelement met vier laagvormige zones van afwisselend geleidingstype.
BE755356A (fr) * 1969-08-27 1971-03-01 Westinghouse Electric Corp Interrupteur a semi conducteur a grille de commande pour courant eleve
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
CH526859A (de) * 1970-11-02 1972-08-15 Bbc Brown Boveri & Cie Bistabiles Halbleiterbauelement
US3914781A (en) * 1971-04-13 1975-10-21 Sony Corp Gate controlled rectifier
DE2164644C3 (de) * 1971-12-24 1979-09-27 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbarer Halbleitergleichrichter
IT1041931B (it) * 1974-09-06 1980-01-10 Rca Corp Raddrizzatore a semiconduttore commutabile allo stato di non conduzione per mezzo di una tensione applicata al proprio elettrodo di porta
CH598696A5 (nl) * 1976-10-08 1978-05-12 Bbc Brown Boveri & Cie
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear

Also Published As

Publication number Publication date
NL7904589A (nl) 1979-12-18
JPS6220713B2 (nl) 1987-05-08
DE2923693A1 (de) 1980-01-03
NL190389B (nl) 1993-09-01
JPS5516497A (en) 1980-02-05
FR2428918A1 (fr) 1980-01-11
DE2923693C2 (nl) 1990-12-06
FR2428918B1 (nl) 1984-06-29

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
BC A request for examination has been filed
BV The patent application has lapsed