BE755356A - Interrupteur a semi conducteur a grille de commande pour courant eleve - Google Patents

Interrupteur a semi conducteur a grille de commande pour courant eleve

Info

Publication number
BE755356A
BE755356A BE755356DA BE755356A BE 755356 A BE755356 A BE 755356A BE 755356D A BE755356D A BE 755356DA BE 755356 A BE755356 A BE 755356A
Authority
BE
Belgium
Prior art keywords
semi
current control
high current
control grid
conductive switch
Prior art date
Application number
Other languages
English (en)
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE755356A publication Critical patent/BE755356A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
BE755356D 1969-08-27 Interrupteur a semi conducteur a grille de commande pour courant eleve BE755356A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85342469A 1969-08-27 1969-08-27

Publications (1)

Publication Number Publication Date
BE755356A true BE755356A (fr) 1971-03-01

Family

ID=25316002

Family Applications (1)

Application Number Title Priority Date Filing Date
BE755356D BE755356A (fr) 1969-08-27 Interrupteur a semi conducteur a grille de commande pour courant eleve

Country Status (8)

Country Link
US (1) US3611072A (fr)
JP (1) JPS5026353B1 (fr)
BE (1) BE755356A (fr)
DE (1) DE2041727A1 (fr)
FR (1) FR2059197A5 (fr)
GB (1) GB1314985A (fr)
SE (1) SE364811B (fr)
ZA (1) ZA705359B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021346B1 (fr) * 1970-08-14 1975-07-22
NL165888C (nl) * 1970-10-10 1981-05-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam bevattende een collectorzone, een basiszone en een emitterzone waarbij de emitterzone ten minste twee strookvormige onderling evenwijdige emittergebieden bevat, die uit afwisselend smallere en bredere delen bestaan.
JPS5532027B2 (fr) * 1973-02-14 1980-08-22
JPS517883A (ja) * 1974-07-08 1976-01-22 Tokyo Shibaura Electric Co Geetotaanofusairisuta
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
GB1558840A (en) * 1977-02-07 1980-01-09 Rca Corp Gate controlled semiconductor device
JPS5516497A (en) * 1978-06-14 1980-02-05 Gen Electric Gate turnnoff semiconductor switching device
JPS55132836U (fr) * 1979-03-13 1980-09-20
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS5871657A (ja) * 1981-10-23 1983-04-28 Toshiba Corp ゲ−トタ−ンオフサイリスタ
JPS6098241U (ja) * 1983-12-09 1985-07-04 株式会社東海理化電機製作所 ダイヤフラムスイツチ
JPH0658959B2 (ja) * 1987-01-29 1994-08-03 富士電機株式会社 ゲ−ト・タ−ン・オフ・サイリスタ
JP2804216B2 (ja) * 1993-06-22 1998-09-24 株式会社日立製作所 ゲートターンオフサイリスタ
DE4403429C2 (de) * 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210621A (en) * 1960-06-20 1965-10-05 Westinghouse Electric Corp Plural emitter semiconductor device
NL296392A (fr) * 1963-08-07
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
US3449649A (en) * 1966-07-09 1969-06-10 Bbc Brown Boveri & Cie S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness

Also Published As

Publication number Publication date
DE2041727A1 (de) 1971-03-04
FR2059197A5 (fr) 1971-05-28
ZA705359B (en) 1971-04-28
US3611072A (en) 1971-10-05
GB1314985A (en) 1973-04-26
SE364811B (fr) 1974-03-04
JPS5026353B1 (fr) 1975-08-30

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19900827