JPS5669861A - Semiconductor heat sensitive switch device - Google Patents

Semiconductor heat sensitive switch device

Info

Publication number
JPS5669861A
JPS5669861A JP14826379A JP14826379A JPS5669861A JP S5669861 A JPS5669861 A JP S5669861A JP 14826379 A JP14826379 A JP 14826379A JP 14826379 A JP14826379 A JP 14826379A JP S5669861 A JPS5669861 A JP S5669861A
Authority
JP
Japan
Prior art keywords
scra
scrb
junction
temperature
heat sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14826379A
Other languages
Japanese (ja)
Inventor
Yutaka Mihashi
Toshio Sogo
Kenichi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14826379A priority Critical patent/JPS5669861A/en
Publication of JPS5669861A publication Critical patent/JPS5669861A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a switch which is turned ON-OFF being bounded at a fixed temperature and can be switched ON-OFF even by a DC power source by juxtaposing horizontal npnpn5 layer structure and vertical pnpnSCR structure. CONSTITUTION:In a horizontal SCRA, n layers 10 and a p layer 4 are made high concentrations, p layers 8 are made low concentrations, and the leakage currents of a junction 9 are increased by low-life regions 23. When applying a DC power source 25 among cathodes 19 and an anode 20, the SCRA is turned ON when not less than yield voltage of a junction 7. A vertical SCRB is a heat sensitive SCR which is changed into OFF from ON when not less than a fixed temperature, and connects electrodes 21 and 20. The SCRA stably keepts its ON within a temperature range in which the yield voltage VBO of the SCRB is larger than the sum VS of the voltage drops of the junction 7 and a junction 5 of the SCRA. When a temperature rises and the VS exceeds the VBO, the SCRB is turned ON and the SCRA OFF. When a temperature drops, the SCRB and the SCRA are restored to the original states. The less gate resistance 26 is made the more the SCRB and the SCRA shift to OFF from ON at a high temperature. According to this constitution, a heat sensitive switch is obtained which can be switched ON-OFF even using the DC power source.
JP14826379A 1979-11-12 1979-11-12 Semiconductor heat sensitive switch device Pending JPS5669861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14826379A JPS5669861A (en) 1979-11-12 1979-11-12 Semiconductor heat sensitive switch device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14826379A JPS5669861A (en) 1979-11-12 1979-11-12 Semiconductor heat sensitive switch device

Publications (1)

Publication Number Publication Date
JPS5669861A true JPS5669861A (en) 1981-06-11

Family

ID=15448855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14826379A Pending JPS5669861A (en) 1979-11-12 1979-11-12 Semiconductor heat sensitive switch device

Country Status (1)

Country Link
JP (1) JPS5669861A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
US5461252A (en) * 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
US5461252A (en) * 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers

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