JPS57153467A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57153467A
JPS57153467A JP3793381A JP3793381A JPS57153467A JP S57153467 A JPS57153467 A JP S57153467A JP 3793381 A JP3793381 A JP 3793381A JP 3793381 A JP3793381 A JP 3793381A JP S57153467 A JPS57153467 A JP S57153467A
Authority
JP
Japan
Prior art keywords
layer
emitter layer
side emitter
insulated
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3793381A
Other languages
Japanese (ja)
Other versions
JPS6364907B2 (en
Inventor
Takahiro Nagano
Saburo Oikawa
Tsutomu Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3793381A priority Critical patent/JPS57153467A/en
Publication of JPS57153467A publication Critical patent/JPS57153467A/en
Publication of JPS6364907B2 publication Critical patent/JPS6364907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent a switching break-down for GTOSCR by a method wherein a rectangular cathode side emitter layers are provided radially in either face of a circular semiconductor substrate, an anode side emitter layer is provided in the projecting portion to the back face side, while an auxiliary emitter layer or the insulated substances are provided in the remainding portion to form an inert condition of the semiconductor, and further the other portions are short- circuited. CONSTITUTION:Since an auxiliary anode side emitter layer 21 is spaced apart from a cathode side emitter layer 5 not to oppose against it, the carrier injected from the layer 5 can not reach the front of the layer 21 and the p-n junction provided therein can not be biased over a voltage stored, the layer 21 does not almost perform the implantation of the carrier into a first base layer 3 and therefore it is equivalent to the insulated substance. Therefore, the electrically active region is defined to the central portion along III-III, IV-IV sections and the surrounding portions have the structure the same as in the regions A, B, and consequently the junction region can be formed uniformly substantially in the longitudinal direction of rectangular unit GTO element. As a result, the electrical property for the unit GTO element becomes uniform and the switching break-down would scarcely occur.
JP3793381A 1981-03-18 1981-03-18 Semiconductor device Granted JPS57153467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3793381A JPS57153467A (en) 1981-03-18 1981-03-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3793381A JPS57153467A (en) 1981-03-18 1981-03-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153467A true JPS57153467A (en) 1982-09-22
JPS6364907B2 JPS6364907B2 (en) 1988-12-14

Family

ID=12511352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3793381A Granted JPS57153467A (en) 1981-03-18 1981-03-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153467A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6099552U (en) * 1983-12-12 1985-07-06 日本インター株式会社 Gate turn-off thyristor
JPS60182167A (en) * 1984-01-31 1985-09-17 ウェスティングハウス　ブレイク　アンド　シグナル　ハウルディングス　リミテッド Gto thyristor
JPS60189260A (en) * 1984-03-09 1985-09-26 Toshiba Corp Gate turn-off thyristor
JPS629669A (en) * 1985-07-08 1987-01-17 Toshiba Corp Gate turn-off thyristor
US4868625A (en) * 1986-07-08 1989-09-19 Hitachi, Ltd. Gate turn-off thyristor of multi-emitter type
JPH02153569A (en) * 1988-12-06 1990-06-13 Hitachi Ltd Gate turn off thyristor
JPH02263470A (en) * 1989-04-04 1990-10-26 Hitachi Ltd Gate turn off thyrister
EP3073530A1 (en) * 2015-03-23 2016-09-28 ABB Technology AG Reverse conducting power semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6099552U (en) * 1983-12-12 1985-07-06 日本インター株式会社 Gate turn-off thyristor
JPS60182167A (en) * 1984-01-31 1985-09-17 ウェスティングハウス　ブレイク　アンド　シグナル　ハウルディングス　リミテッド Gto thyristor
JPS60189260A (en) * 1984-03-09 1985-09-26 Toshiba Corp Gate turn-off thyristor
JPH0534834B2 (en) * 1984-03-09 1993-05-25 Tokyo Shibaura Electric Co
JPS629669A (en) * 1985-07-08 1987-01-17 Toshiba Corp Gate turn-off thyristor
US4868625A (en) * 1986-07-08 1989-09-19 Hitachi, Ltd. Gate turn-off thyristor of multi-emitter type
JPH02153569A (en) * 1988-12-06 1990-06-13 Hitachi Ltd Gate turn off thyristor
JPH02263470A (en) * 1989-04-04 1990-10-26 Hitachi Ltd Gate turn off thyrister
EP3073530A1 (en) * 2015-03-23 2016-09-28 ABB Technology AG Reverse conducting power semiconductor device
KR20160113994A (en) * 2015-03-23 2016-10-04 에이비비 슈바이쯔 아게 Reverse conducting power semiconductor device
US9543305B2 (en) 2015-03-23 2017-01-10 Abb Schweiz Ag Reverse conducting power semiconductor device

Also Published As

Publication number Publication date
JPS6364907B2 (en) 1988-12-14

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