JPS6099552U

JPS6099552U - Gate turn-off thyristor

Info

Publication number: JPS6099552U
Application number: JP19173583U
Authority: JP
Inventors: 康夫山口; 宍戸　長次
Original assignee: 日本インター株式会社
Priority date: 1983-12-12
Filing date: 1983-12-12
Publication date: 1985-07-06

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図は本考案に係るＧＴＯのカソードエミッタ電極側
から見た平面図、第２図は第１図のＡ−Ａ線に沿う断面
図、第３図Ａ乃至りは本考案の他の実施例を示す一部切
欠平面図、第４図は本考案のさらに他の実施例を示す一
部切欠平面図である。１　・・−ＧＴｏ、　４．４　ａ、　４　ｂ、　４０・
・・ゲート領域、５＝　５ａ＝　５ｂ、　５ｃｔ　５０
，５１−５２””カソードエミッタ領域、Ｗ・・・ウェ
ハ、７・・・ゲート電極金属、７ａ・・・ゲート導出導
体接続部。Fig. 1 is a plan view of the GTO according to the present invention as seen from the cathode emitter electrode side, Fig. 2 is a sectional view taken along the line A-A in Fig. 1, and Fig. 3 A to 3 are other embodiments of the present invention. FIG. 4 is a partially cutaway plan view showing still another embodiment of the present invention. 1...-GTo, 4.4 a, 4 b, 40.
・Gate area, 5=5a=5b, 5ct 50
, 51-52'' cathode emitter region, W... wafer, 7... gate electrode metal, 7a... gate lead-out conductor connection portion.

Claims

[Scope of utility model registration request]

(1) Cathode emitter regions are selectively formed in a plurality of independent island shapes within the gate region, and the island-shaped cathode emitter regions are arranged to extend radially from around the center of the wafer, and the gate region and a gate turn-off thyristor having an electrode metal formed thereon and a conductor connection portion leading to the outside from at least one location on the gate electrode metal surface, which is far from the connection portion of the gate lead-out conductor. The gate turn-off risk is characterized in that the area of the cathode emitter region becomes smaller in proportion to the area of the cathode emitter region closer to the connection portion of the gate lead-out conductor.

(2) The gate turn-off thyristor according to claim 1, wherein the cathode emitter region is formed as a plurality of mutually separated elongated islands extending in the radial direction of the wafer.

(3) The gate turn-off thyristor according to claim 1, wherein the cathode emitter regions are formed as a plurality of circular islands arranged in the radial direction of the wafer and separated from each other.

(4) The cathode emitter region is formed as a fan-shaped island separated from each other, with both corner portions extending in the radial direction of the wafer, and both corner portions being on opposite sides of the connection portion of the gate lead-out conductor. gate turn-off thyristor.

(5) The gate turn-off thyristor according to claim 1, wherein the cathode emitter region has a combination of island shapes according to claims 2 to 4.