JPS6476765A - Gate turn off thyristor - Google Patents

Gate turn off thyristor

Info

Publication number
JPS6476765A
JPS6476765A JP62232235A JP23223587A JPS6476765A JP S6476765 A JPS6476765 A JP S6476765A JP 62232235 A JP62232235 A JP 62232235A JP 23223587 A JP23223587 A JP 23223587A JP S6476765 A JPS6476765 A JP S6476765A
Authority
JP
Japan
Prior art keywords
gate electrode
gto
cathode
anode
superconducting material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62232235A
Other languages
Japanese (ja)
Inventor
Yukimasa Sato
Tsutomu Yao
Isamu Sanpei
Kenji Yagishita
Hitoshi Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP62232235A priority Critical patent/JPS6476765A/en
Publication of JPS6476765A publication Critical patent/JPS6476765A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/437—Superconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)

Abstract

PURPOSE:To make the electric resistance of a gate electrode zero in a superconductive state, operate many unit elements in parallel, and make the value of maximum breaking current of GTO larger than the prior value, by constituting the gate electrode of the GTO by using superconducting material. CONSTITUTION:A GTO element is constituted of many unit GTO regions, and each unit GTO region 5 comprises the following; an anode electrode, an anode emitter layer, an anode base layer 3, a cathode base layer 1. a cathode emitter layer 2, a gate electrode 10 and a cathode electrode 20. A gate electrode 10 constituted of superconducting material is arranged on the exposed surface of the cathode base layer 1. When the gate electrode 10 or the whole of GTO element is cooled at a temperature lower than or equal to the critical temperature of superconducting material constituting the gate electrode, the electric resistance of the gate electrode 10 becomes zero. As a result, gate current flows uniformly to each cathode emitter layer 2, so that all elements operate in parallel, and the maximum breaking current increases.
JP62232235A 1987-09-18 1987-09-18 Gate turn off thyristor Pending JPS6476765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232235A JPS6476765A (en) 1987-09-18 1987-09-18 Gate turn off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232235A JPS6476765A (en) 1987-09-18 1987-09-18 Gate turn off thyristor

Publications (1)

Publication Number Publication Date
JPS6476765A true JPS6476765A (en) 1989-03-22

Family

ID=16936091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232235A Pending JPS6476765A (en) 1987-09-18 1987-09-18 Gate turn off thyristor

Country Status (1)

Country Link
JP (1) JPS6476765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570366U (en) * 1991-11-21 1993-09-24 株式会社テラモト Bedding mat

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570366U (en) * 1991-11-21 1993-09-24 株式会社テラモト Bedding mat

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