JPS56162868A - Gate-turn-off thyristor - Google Patents

Gate-turn-off thyristor

Info

Publication number
JPS56162868A
JPS56162868A JP6617680A JP6617680A JPS56162868A JP S56162868 A JPS56162868 A JP S56162868A JP 6617680 A JP6617680 A JP 6617680A JP 6617680 A JP6617680 A JP 6617680A JP S56162868 A JPS56162868 A JP S56162868A
Authority
JP
Japan
Prior art keywords
layer
turn
cathode
thyristor
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6617680A
Other languages
Japanese (ja)
Other versions
JPS621260B2 (en
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP6617680A priority Critical patent/JPS56162868A/en
Publication of JPS56162868A publication Critical patent/JPS56162868A/en
Publication of JPS621260B2 publication Critical patent/JPS621260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the cathode junction of a gate-turn-off thyristor from being broken down with overvoltage generated at the turn-off time by forming a cathode layer in addition to a main cathode layer conducting a main current and confronting a low resistance layer in a special shape. CONSTITUTION:A low resistance layer P2<++> type layer having high impurity density is buried in the base region P2 of a gate-turn-off (GTO) thyristor. The part confroting the main cathode layer N2 conducting a main current is formed in mesh shape, and the other part is connected to a wide band layer 1. A cathode layer N3 is formed to confront the layer 1 in addition to the main cathode layer N2. The electrodes of the N3 and N2 layers are connected so that the potentials of the electrodes become equal potential on the surfaces. Thus formed GTO thyristor is so formed that the withstand voltage of the junction part J4 of the N3 layer is lower than that of the junction part J3 of the N2 layer, and it can prevent the cathode junction from being broken down with overvoltage generated at the turn-off time.
JP6617680A 1980-05-19 1980-05-19 Gate-turn-off thyristor Granted JPS56162868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6617680A JPS56162868A (en) 1980-05-19 1980-05-19 Gate-turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6617680A JPS56162868A (en) 1980-05-19 1980-05-19 Gate-turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS56162868A true JPS56162868A (en) 1981-12-15
JPS621260B2 JPS621260B2 (en) 1987-01-12

Family

ID=13308267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6617680A Granted JPS56162868A (en) 1980-05-19 1980-05-19 Gate-turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS56162868A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0360160A (en) * 1989-07-28 1991-03-15 Toyo Electric Mfg Co Ltd Self-arc-supressing thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147083A (en) * 2008-12-16 2010-07-01 Kansai Electric Power Co Inc:The Gate turnoff thyristor device and bipolar transistor apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0360160A (en) * 1989-07-28 1991-03-15 Toyo Electric Mfg Co Ltd Self-arc-supressing thyristor

Also Published As

Publication number Publication date
JPS621260B2 (en) 1987-01-12

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