JPS57121276A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS57121276A
JPS57121276A JP664181A JP664181A JPS57121276A JP S57121276 A JPS57121276 A JP S57121276A JP 664181 A JP664181 A JP 664181A JP 664181 A JP664181 A JP 664181A JP S57121276 A JPS57121276 A JP S57121276A
Authority
JP
Japan
Prior art keywords
layer
thyristor
high resistance
low resistance
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP664181A
Other languages
Japanese (ja)
Inventor
Toshiaki Suzuki
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP664181A priority Critical patent/JPS57121276A/en
Publication of JPS57121276A publication Critical patent/JPS57121276A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To suppress a commutation surge voltage of a gate turn-off thyristor by the breakdown between a cathode N2 layer and a high resistance layer by forming a low resistance buried layer and the high resistance layer in the P2 base layer of the gate turn off (GTO) thyristor of four layers P1, N1, P2, N2. CONSTITUTION:A low resistance buried P2<++> type layer is formed in a lattice shape in the P2 base layer of a GTO thyristor having four layers of P1, N1, P2, N2, and a high resistance P2<-> layer is formed between the low resistance bufied layer and a cathode N2 layer. The impurity density of the high resistance layer and the distance between the low resistance buried layer and the cathode N2 layer are determined to the prescribed value so that the breakdown voltage between the N2P2<-> layers becmes the vicinity of the offset power voltage, thereby suppressing the commutation surge voltage by the breakdown. Thus, the protecting function can be enhanced without providing special over voltage suppressing circuit.
JP664181A 1981-01-20 1981-01-20 Gate turn-off thyristor Pending JPS57121276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP664181A JPS57121276A (en) 1981-01-20 1981-01-20 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP664181A JPS57121276A (en) 1981-01-20 1981-01-20 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS57121276A true JPS57121276A (en) 1982-07-28

Family

ID=11643987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP664181A Pending JPS57121276A (en) 1981-01-20 1981-01-20 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS57121276A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147769A (en) * 1985-12-20 1987-07-01 Fuji Electric Co Ltd Gto thyristor
JPS62150775A (en) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd Gate turn-off thyristor
JPS63216377A (en) * 1987-03-05 1988-09-08 Mitsubishi Electric Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111578A (en) * 1974-07-19 1976-01-29 Meidensha Electric Mfg Co Ltd HANDOTA ISOCHI
JPS54131885A (en) * 1978-04-04 1979-10-13 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111578A (en) * 1974-07-19 1976-01-29 Meidensha Electric Mfg Co Ltd HANDOTA ISOCHI
JPS54131885A (en) * 1978-04-04 1979-10-13 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147769A (en) * 1985-12-20 1987-07-01 Fuji Electric Co Ltd Gto thyristor
JPH0551186B2 (en) * 1985-12-20 1993-07-30 Fuji Electric Co Ltd
JPS62150775A (en) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd Gate turn-off thyristor
JPS63216377A (en) * 1987-03-05 1988-09-08 Mitsubishi Electric Corp Semiconductor device

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