JPS54113275A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54113275A JPS54113275A JP1988278A JP1988278A JPS54113275A JP S54113275 A JPS54113275 A JP S54113275A JP 1988278 A JP1988278 A JP 1988278A JP 1988278 A JP1988278 A JP 1988278A JP S54113275 A JPS54113275 A JP S54113275A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- top layer
- type layer
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To aviod the deformation of the edge of the top layer to reduce a leak current by subjecting the top layer to the sand blast process after covering the top layer with a film, where an Al film and a PSG film are laminated, when a gate turn-off thyristor is constituted to form a bevel face in the side face.
CONSTITUTION: N-type layer 3 to be a base region is provided on P-type layer 4 to be an anode region, and P-type layer 2 to be a gate region is formed on layer 3, and N-type layer 1 to be a cathode region is provided in layer 2, thereby constituting a gate turn-off thyristor. After that, though side faces of these layers are subjected to sand blast to form a bevel face, the edge of N-type layer 1 of the top layer is deformed. For the purpose of preventing this deformation, Al layer 15 is caused to adhere to the top layer and is covered with hard insulating film 16 such as PSG, and the sand blast process is performed. As a result, the side edge of the substrate is prevented from breaking, and the leak current is reduced.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988278A JPS54113275A (en) | 1978-02-24 | 1978-02-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988278A JPS54113275A (en) | 1978-02-24 | 1978-02-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54113275A true JPS54113275A (en) | 1979-09-04 |
Family
ID=12011572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988278A Pending JPS54113275A (en) | 1978-02-24 | 1978-02-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54113275A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57139962A (en) * | 1981-02-25 | 1982-08-30 | Nec Corp | Semiconductor device |
JPS6235568A (en) * | 1985-08-08 | 1987-02-16 | Mitsubishi Electric Corp | Semiconductor device |
-
1978
- 1978-02-24 JP JP1988278A patent/JPS54113275A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57139962A (en) * | 1981-02-25 | 1982-08-30 | Nec Corp | Semiconductor device |
JPS6235568A (en) * | 1985-08-08 | 1987-02-16 | Mitsubishi Electric Corp | Semiconductor device |
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