JPS57178369A - Gate turnoff thyristor - Google Patents

Gate turnoff thyristor

Info

Publication number
JPS57178369A
JPS57178369A JP6471481A JP6471481A JPS57178369A JP S57178369 A JPS57178369 A JP S57178369A JP 6471481 A JP6471481 A JP 6471481A JP 6471481 A JP6471481 A JP 6471481A JP S57178369 A JPS57178369 A JP S57178369A
Authority
JP
Japan
Prior art keywords
layers
concentration
layer
depth
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6471481A
Other languages
Japanese (ja)
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP6471481A priority Critical patent/JPS57178369A/en
Publication of JPS57178369A publication Critical patent/JPS57178369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the performance of breaking while preventing the lowering of reverse dielectric resistnance by forming a P layer at the anode side by a deep section, surface concentration thereof is high, and a shallow section, surface concentration thereof is low. CONSTITUTION:The P layer at the anode side in the GTO having PNPN structure is formed by the deep P1 layers 2, surface concentration thereof is high, and the shallow P3 layers 16, surface concentration thereof is low. The P3 layers 16 are formed while being opposed to the central sections of cathode N2 layers 4. With the GTO, boron is diffused up to 50mu depth to the whole surface of one surface and partially to the other surface in an N type Si substrate having 50OMEGAcm resistivity and 300mu thickness and P1N1P2 layers are shaped, phosphorus is partially diffused up to 25mu depth to the surface of a P2 layer, and boron is diffused to the whole surface at the P1 layer side in low concentration and the P3 layers having 20mu depth are formed. Since the P3 layers 16 are shaped, current concentration to the central sections of the N2 layers 4 at the time of turn-OFF is prevented, and the performance of breaking can be improved.
JP6471481A 1981-04-28 1981-04-28 Gate turnoff thyristor Pending JPS57178369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6471481A JPS57178369A (en) 1981-04-28 1981-04-28 Gate turnoff thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6471481A JPS57178369A (en) 1981-04-28 1981-04-28 Gate turnoff thyristor

Publications (1)

Publication Number Publication Date
JPS57178369A true JPS57178369A (en) 1982-11-02

Family

ID=13266087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6471481A Pending JPS57178369A (en) 1981-04-28 1981-04-28 Gate turnoff thyristor

Country Status (1)

Country Link
JP (1) JPS57178369A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59197171A (en) * 1984-03-09 1984-11-08 Toshiba Corp Gate turnoff thyristor
EP0178582A2 (en) * 1984-10-15 1986-04-23 Hitachi, Ltd. Reverse blocking type semiconductor device
JPS61218171A (en) * 1985-03-23 1986-09-27 Hitachi Ltd Semiconductor device
US4617583A (en) * 1984-03-09 1986-10-14 Kabushiki Kaisha Toshiba Gate turn-off thyristor
EP0241662A2 (en) * 1986-04-12 1987-10-21 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Turn-off thyristor
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
JP2011103333A (en) * 2009-11-10 2011-05-26 Shindengen Electric Mfg Co Ltd Thyristor
JP2011108876A (en) * 2009-11-18 2011-06-02 Shindengen Electric Mfg Co Ltd Thyristor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651863A (en) * 1979-10-03 1981-05-09 Toshiba Corp Gate turn-off thyrister

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651863A (en) * 1979-10-03 1981-05-09 Toshiba Corp Gate turn-off thyrister

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59197171A (en) * 1984-03-09 1984-11-08 Toshiba Corp Gate turnoff thyristor
US4617583A (en) * 1984-03-09 1986-10-14 Kabushiki Kaisha Toshiba Gate turn-off thyristor
JPH026230B2 (en) * 1984-03-09 1990-02-08 Tokyo Shibaura Electric Co
EP0178582A2 (en) * 1984-10-15 1986-04-23 Hitachi, Ltd. Reverse blocking type semiconductor device
US4713679A (en) * 1984-10-15 1987-12-15 Hitachi, Ltd. Reverse blocking type semiconductor device
JPS61218171A (en) * 1985-03-23 1986-09-27 Hitachi Ltd Semiconductor device
JPH0347592B2 (en) * 1985-03-23 1991-07-19 Hitachi Ltd
EP0241662A2 (en) * 1986-04-12 1987-10-21 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Turn-off thyristor
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
JP2011103333A (en) * 2009-11-10 2011-05-26 Shindengen Electric Mfg Co Ltd Thyristor
JP2011108876A (en) * 2009-11-18 2011-06-02 Shindengen Electric Mfg Co Ltd Thyristor

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