JPS5766668A - 2-gate semiconductor device - Google Patents

2-gate semiconductor device

Info

Publication number
JPS5766668A
JPS5766668A JP14271080A JP14271080A JPS5766668A JP S5766668 A JPS5766668 A JP S5766668A JP 14271080 A JP14271080 A JP 14271080A JP 14271080 A JP14271080 A JP 14271080A JP S5766668 A JPS5766668 A JP S5766668A
Authority
JP
Japan
Prior art keywords
gate
driven
applied voltage
effect
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14271080A
Other languages
Japanese (ja)
Other versions
JPS6148785B2 (en
Inventor
Minami Takeuchi
Tomio Komiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14271080A priority Critical patent/JPS5766668A/en
Publication of JPS5766668A publication Critical patent/JPS5766668A/en
Publication of JPS6148785B2 publication Critical patent/JPS6148785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a thyristor having high di/dt withstand amount (critical ON current rising rate) and small finger voltage by providing a plurality of gate electrode leading terminals and making the respective terminals function independently. CONSTITUTION:A driving circuit for selectively driving the first gate 25 and the second gate 26 is connected between a cathode 23b and an anode 20a, when the applied voltage is near the rated value, the first gate 25 is driven to effectively operate the amplifying effect, and the initial conduction area can be increased. When the applied voltage is lower than 100V, the second gate 26 is driven to lower the finger voltage. That is, the first gate 25 and the second gate 26 are selectively driven in response to the applied voltage between the cathode 23b and the anode 20a to reduce the shortcircuit emitter effect, and di/dt withstand amount is suppressed to effectively utilize the amplifying gate effect.
JP14271080A 1980-10-13 1980-10-13 2-gate semiconductor device Granted JPS5766668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14271080A JPS5766668A (en) 1980-10-13 1980-10-13 2-gate semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14271080A JPS5766668A (en) 1980-10-13 1980-10-13 2-gate semiconductor device

Publications (2)

Publication Number Publication Date
JPS5766668A true JPS5766668A (en) 1982-04-22
JPS6148785B2 JPS6148785B2 (en) 1986-10-25

Family

ID=15321763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14271080A Granted JPS5766668A (en) 1980-10-13 1980-10-13 2-gate semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766668A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133989U (en) * 1988-03-08 1989-09-12

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4728449U (en) * 1971-03-22 1972-12-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4728449U (en) * 1971-03-22 1972-12-01

Also Published As

Publication number Publication date
JPS6148785B2 (en) 1986-10-25

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