JPS5627967A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5627967A JPS5627967A JP10316779A JP10316779A JPS5627967A JP S5627967 A JPS5627967 A JP S5627967A JP 10316779 A JP10316779 A JP 10316779A JP 10316779 A JP10316779 A JP 10316779A JP S5627967 A JPS5627967 A JP S5627967A
- Authority
- JP
- Japan
- Prior art keywords
- density
- low
- impurity
- layer
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To contrive the increase in the withstand voltage of a thyristor without increasing the thickness of a base layer by defining the architecture of an emitter layer to thus reduce an iniection efficiency thereof and decrease the current amplification factor thereof. CONSTITUTION:The emitter layer 4 adjacently making contact with the base layer 3 having low impurity density of two intermediate layers 2, 3 consists in impurity density distriution of a portionof a portion having high deptn and low density, and a portion having low depth and high density and formed of a recrystallization layer formed when alloying a metal for imparting equal conductivity to the emitter when mixing the impurity in a semiconductor and the conductor. The maximum density of the low density portion is less than 1.5X10<16>atoms/cm<3>, and the depth from the boundary between the low density portion and the high density portion to the P-N junction becomes higher than 60mum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10316779A JPS6019149B2 (en) | 1979-08-15 | 1979-08-15 | thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10316779A JPS6019149B2 (en) | 1979-08-15 | 1979-08-15 | thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627967A true JPS5627967A (en) | 1981-03-18 |
JPS6019149B2 JPS6019149B2 (en) | 1985-05-14 |
Family
ID=14346942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10316779A Expired JPS6019149B2 (en) | 1979-08-15 | 1979-08-15 | thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6019149B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60142531U (en) * | 1984-02-28 | 1985-09-20 | 株式会社明電舎 | Gate turn-off thyristor |
-
1979
- 1979-08-15 JP JP10316779A patent/JPS6019149B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60142531U (en) * | 1984-02-28 | 1985-09-20 | 株式会社明電舎 | Gate turn-off thyristor |
JPH0448024Y2 (en) * | 1984-02-28 | 1992-11-12 |
Also Published As
Publication number | Publication date |
---|---|
JPS6019149B2 (en) | 1985-05-14 |
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