JPS5627967A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5627967A
JPS5627967A JP10316779A JP10316779A JPS5627967A JP S5627967 A JPS5627967 A JP S5627967A JP 10316779 A JP10316779 A JP 10316779A JP 10316779 A JP10316779 A JP 10316779A JP S5627967 A JPS5627967 A JP S5627967A
Authority
JP
Japan
Prior art keywords
density
low
impurity
layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10316779A
Other languages
Japanese (ja)
Other versions
JPS6019149B2 (en
Inventor
Masami Naito
Tokuo Watanabe
Tsutomu Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10316779A priority Critical patent/JPS6019149B2/en
Publication of JPS5627967A publication Critical patent/JPS5627967A/en
Publication of JPS6019149B2 publication Critical patent/JPS6019149B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To contrive the increase in the withstand voltage of a thyristor without increasing the thickness of a base layer by defining the architecture of an emitter layer to thus reduce an iniection efficiency thereof and decrease the current amplification factor thereof. CONSTITUTION:The emitter layer 4 adjacently making contact with the base layer 3 having low impurity density of two intermediate layers 2, 3 consists in impurity density distriution of a portionof a portion having high deptn and low density, and a portion having low depth and high density and formed of a recrystallization layer formed when alloying a metal for imparting equal conductivity to the emitter when mixing the impurity in a semiconductor and the conductor. The maximum density of the low density portion is less than 1.5X10<16>atoms/cm<3>, and the depth from the boundary between the low density portion and the high density portion to the P-N junction becomes higher than 60mum.
JP10316779A 1979-08-15 1979-08-15 thyristor Expired JPS6019149B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10316779A JPS6019149B2 (en) 1979-08-15 1979-08-15 thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10316779A JPS6019149B2 (en) 1979-08-15 1979-08-15 thyristor

Publications (2)

Publication Number Publication Date
JPS5627967A true JPS5627967A (en) 1981-03-18
JPS6019149B2 JPS6019149B2 (en) 1985-05-14

Family

ID=14346942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10316779A Expired JPS6019149B2 (en) 1979-08-15 1979-08-15 thyristor

Country Status (1)

Country Link
JP (1) JPS6019149B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142531U (en) * 1984-02-28 1985-09-20 株式会社明電舎 Gate turn-off thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142531U (en) * 1984-02-28 1985-09-20 株式会社明電舎 Gate turn-off thyristor
JPH0448024Y2 (en) * 1984-02-28 1992-11-12

Also Published As

Publication number Publication date
JPS6019149B2 (en) 1985-05-14

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