JPS5650568A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5650568A
JPS5650568A JP12763579A JP12763579A JPS5650568A JP S5650568 A JPS5650568 A JP S5650568A JP 12763579 A JP12763579 A JP 12763579A JP 12763579 A JP12763579 A JP 12763579A JP S5650568 A JPS5650568 A JP S5650568A
Authority
JP
Japan
Prior art keywords
layer
conductivity type
base layer
type conductivity
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12763579A
Other languages
Japanese (ja)
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12763579A priority Critical patent/JPS5650568A/en
Priority to CA000361936A priority patent/CA1159157A/en
Publication of JPS5650568A publication Critical patent/JPS5650568A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To contrive the increase in the operating speed of and withstand voltage of a thyristor by forming a p type conductivity type gate region adjacent to a p type conductivity type base layer in an n type conductivity type base layer and an auxiliary thyristor between the gate electrode and the cathode electrode and limiting the hole injection amount from the anode layer to the n type conductivity type base layer. CONSTITUTION:In an auxiliary thyristor 11 are formed a cathode region 12 having equal impurity density to a cathode layer 4 around a gate electrode 7 and an auxiliary gate electrode 13 on the surface of the region 12. The thickness WB of the p type conductivity type base layer 3a is so determined as to satisfy the relation of Nd.a<2Na.WB<2> between the mutual interval 2a of the gate regions 9 and the impurity density Na of the layer 3a, the impurity density Nd of the n type conductivity type base layer 1. Since higher density n<+> type conductivity type base region 10 than the base layer 1 is formed between the layer 1 and the anode layer 2 in case that reverse bias voltage is applied between the cathode electrode 6 and the anode electrode 5 in cutting off the current, this limits the hole injection amount to the base layer 1 from the anode layer 2, thereby suppressing the hole injection amount to minimum.
JP12763579A 1979-10-02 1979-10-02 Thyristor Pending JPS5650568A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12763579A JPS5650568A (en) 1979-10-02 1979-10-02 Thyristor
CA000361936A CA1159157A (en) 1979-10-02 1980-10-02 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12763579A JPS5650568A (en) 1979-10-02 1979-10-02 Thyristor

Publications (1)

Publication Number Publication Date
JPS5650568A true JPS5650568A (en) 1981-05-07

Family

ID=14964964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12763579A Pending JPS5650568A (en) 1979-10-02 1979-10-02 Thyristor

Country Status (2)

Country Link
JP (1) JPS5650568A (en)
CA (1) CA1159157A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59166453U (en) * 1983-04-21 1984-11-08 株式会社明電舎 Gate turn-off thyristor with amplification gate structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59166453U (en) * 1983-04-21 1984-11-08 株式会社明電舎 Gate turn-off thyristor with amplification gate structure
JPH025544Y2 (en) * 1983-04-21 1990-02-09

Also Published As

Publication number Publication date
CA1159157A (en) 1983-12-20

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