JPS5650565A - Semiconductor controlled rectifier - Google Patents

Semiconductor controlled rectifier

Info

Publication number
JPS5650565A
JPS5650565A JP12752779A JP12752779A JPS5650565A JP S5650565 A JPS5650565 A JP S5650565A JP 12752779 A JP12752779 A JP 12752779A JP 12752779 A JP12752779 A JP 12752779A JP S5650565 A JPS5650565 A JP S5650565A
Authority
JP
Japan
Prior art keywords
layer
conductivity type
speed
type conductivity
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12752779A
Other languages
Japanese (ja)
Other versions
JPS6013311B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12752779A priority Critical patent/JPS6013311B2/en
Priority to CA000361937A priority patent/CA1159158A/en
Publication of JPS5650565A publication Critical patent/JPS5650565A/en
Publication of JPS6013311B2 publication Critical patent/JPS6013311B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Abstract

PURPOSE:To contrive the high speed and high withstand voltage of a semiconductor controlled rectifier by increasing controlling speed and increasing di/dt with respect to the high speed operation and the withstand voltage against dv/dt. CONSTITUTION:There are formed on an n type conductivity type base layer 1 a p<+> type conductivity type gate region 8 formed in comblike or mesh shape of laterally and longitudinally fine patterns adjacent to a p type conductivity type base layer 1, and an n<+> type conductivity type base region 9 containing higher density impurity than the base layer 1 between the layer 1 and a p<+> type anode layer 2. The thickness WE of the base 3a is so determined as to satisfy the relation of Nd.a<2Na.WE<2> between the mutual interval 2a of the gate regions 8 and the impurity densities Na, Nd of the layer 1. Accordingly, the turn-off speed becomes high due to the gate region 8, and the turn-off speed is further accelerated by the layer 9.
JP12752779A 1979-10-01 1979-10-01 Semiconductor controlled rectifier Expired JPS6013311B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12752779A JPS6013311B2 (en) 1979-10-01 1979-10-01 Semiconductor controlled rectifier
CA000361937A CA1159158A (en) 1979-10-01 1980-10-01 Semiconductor controlled rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12752779A JPS6013311B2 (en) 1979-10-01 1979-10-01 Semiconductor controlled rectifier

Publications (2)

Publication Number Publication Date
JPS5650565A true JPS5650565A (en) 1981-05-07
JPS6013311B2 JPS6013311B2 (en) 1985-04-06

Family

ID=14962213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12752779A Expired JPS6013311B2 (en) 1979-10-01 1979-10-01 Semiconductor controlled rectifier

Country Status (2)

Country Link
JP (1) JPS6013311B2 (en)
CA (1) CA1159158A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108773A (en) * 1981-11-23 1983-06-28 ゼネラル・エレクトリツク・カンパニイ Semiconductor element rapidly removing majority carrier from active base region at turn off time and method of producing same
US5014101A (en) * 1989-01-21 1991-05-07 Lucas Industries Public Limited Company Semiconductor IGBT with improved turn-off switching time
WO2009032165A1 (en) 2007-08-28 2009-03-12 Littelfuse, Inc. Epitaxial surge protection device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142559A (en) * 1983-12-29 1985-07-27 Fujitsu Ltd Programmable read only memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108773A (en) * 1981-11-23 1983-06-28 ゼネラル・エレクトリツク・カンパニイ Semiconductor element rapidly removing majority carrier from active base region at turn off time and method of producing same
US5014101A (en) * 1989-01-21 1991-05-07 Lucas Industries Public Limited Company Semiconductor IGBT with improved turn-off switching time
WO2009032165A1 (en) 2007-08-28 2009-03-12 Littelfuse, Inc. Epitaxial surge protection device
EP2183833A1 (en) * 2007-08-28 2010-05-12 Littelfuse, Inc. Epitaxial surge protection device
EP2183833A4 (en) * 2007-08-28 2013-03-20 Littelfuse Inc Epitaxial surge protection device

Also Published As

Publication number Publication date
JPS6013311B2 (en) 1985-04-06
CA1159158A (en) 1983-12-20

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