CA1159158A - Semiconductor controlled rectifier - Google Patents
Semiconductor controlled rectifierInfo
- Publication number
- CA1159158A CA1159158A CA000361937A CA361937A CA1159158A CA 1159158 A CA1159158 A CA 1159158A CA 000361937 A CA000361937 A CA 000361937A CA 361937 A CA361937 A CA 361937A CA 1159158 A CA1159158 A CA 1159158A
- Authority
- CA
- Canada
- Prior art keywords
- region
- anode
- base region
- cathode
- type conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title description 5
- 239000012535 impurity Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Abstract
48,918 ABSTRACT OF THE DISCLOSURE
The present invention is directed to a con-trolled rectifier comprised of four regions comprising an anode emitter region, an anode base region, a cathode base region and a cathode emitter region. In addition, the controlled rectifier of the present invention has a plur-ality of gate regions extending from a p-n junction or interface between the two base regions into the anode base region and a thin region disposed between the anode emit-ter region and the anode base region. The regions com-prising the plurality of gate regions have the same type of conductivity as the cathode base region but are doped to a higher level than the anode base region. The thin region has the same type conductivity as the anode base region but is doped to higher level than the anode base region.
The present invention is directed to a con-trolled rectifier comprised of four regions comprising an anode emitter region, an anode base region, a cathode base region and a cathode emitter region. In addition, the controlled rectifier of the present invention has a plur-ality of gate regions extending from a p-n junction or interface between the two base regions into the anode base region and a thin region disposed between the anode emit-ter region and the anode base region. The regions com-prising the plurality of gate regions have the same type of conductivity as the cathode base region but are doped to a higher level than the anode base region. The thin region has the same type conductivity as the anode base region but is doped to higher level than the anode base region.
Description
59~
1 48,918 SEMICON~UCTOR CONTROLLE~ RECTIFIER
CROSS-REFERENCES TO RELATED APPLICATION AND PATENT
me present invention is related to U.S. Patent No. 4,275,408, issued June 23, 1981 and Canadian applicatlon S.N. 361,936 filed October 2, 1980.
BACKGROUND OF THE INVENTION
Field o~ the Invention-_ The present invention is ln the field o~ seml-conductor devices genera~ly, and specifically is directed to a controlled rectifter device.
Description o~ the Prior Art:
With reference to Fig. 1, there ls shown a typi-cal prior art thyristor 10.
In Fig. 1, 12 is ~n anode base layer or region of an n type conductivity r~latlvely low in concentra-tion, as for example 104 to 1016 atoms/cc. 14 i~ an anode emltter region or layer of a p+ type conductlvity, pro-vided on one surface o~ said anode base layer or region 12. Reglon 14 i8 doped to a level o~ from 1018 to 5 x 1021 atoms per cc~ 16 is a cathode base layer or region of a p type conducti~ty provided on the other surface of the anode ba~e layer 12. 20 is a cathode emitter region or layer of an n type conductivity, doped to a concentra~
tion from 1018 to 5 x 1021 7 and ~electiYely disposed on said p type conductlvity cathode ba~e layer 16. mere is
1 48,918 SEMICON~UCTOR CONTROLLE~ RECTIFIER
CROSS-REFERENCES TO RELATED APPLICATION AND PATENT
me present invention is related to U.S. Patent No. 4,275,408, issued June 23, 1981 and Canadian applicatlon S.N. 361,936 filed October 2, 1980.
BACKGROUND OF THE INVENTION
Field o~ the Invention-_ The present invention is ln the field o~ seml-conductor devices genera~ly, and specifically is directed to a controlled rectifter device.
Description o~ the Prior Art:
With reference to Fig. 1, there ls shown a typi-cal prior art thyristor 10.
In Fig. 1, 12 is ~n anode base layer or region of an n type conductivity r~latlvely low in concentra-tion, as for example 104 to 1016 atoms/cc. 14 i~ an anode emltter region or layer of a p+ type conductlvity, pro-vided on one surface o~ said anode base layer or region 12. Reglon 14 i8 doped to a level o~ from 1018 to 5 x 1021 atoms per cc~ 16 is a cathode base layer or region of a p type conducti~ty provided on the other surface of the anode ba~e layer 12. 20 is a cathode emitter region or layer of an n type conductivity, doped to a concentra~
tion from 1018 to 5 x 1021 7 and ~electiYely disposed on said p type conductlvity cathode ba~e layer 16. mere is
2 4~,918 a metallic anode electrode 22 ln electrlcal. ohmic contact with the anode emitter region 19-, and a meta]'ic cathode electrode 24 in electrlcally ohmic contact with the cath-ode emitter region 20, and 26 is a gate electro~e in electrical ohmic contact with the cathode base 1ayer or region 16.
The operation of thyristors, such as thyristor 10, is general].y as follows. Upon the applica-tion of a principal current, a negative bias is applied to the cathode electrode 24 while a positive bias is applied to the anode electrode 22. At that time, a p-n junction 2~
between the anode emitter region or layer 14 and the n type conductivity ancde base region 12 and a p-n junction 30 between the cathode emitter region 20 and the p type conductivity cathode base region or layer 16 are forwardly biased. A p-n junction 32 between the n type conductivity anode base layer 12 and the p type conductivity cathode base layer 16 is reverse biased.
Theoretically, holes are injected from the gate electrode 26 and electrons are injected from the cathode electrode 24 through the cathode emitter layer 20 into the p type conductivity cathode base layer 16. The injected electrons pass across the p-n ~unction 32 and are col-lected on the n type conductivity anode base layer 12. At - 25 that time, holes from the anode emitter layer or region 1~
are injected into the n type conductivity anode base layer 12 and pass through the anode base layer 12 to be col-lected on the p type conductivity cathode base region 16.
The holes cause electrons from the cathode emitter region to again be injected into the p type conductivity cathode base region 16 through the p-n junction 30. By repeating this process, the holes and electrons are accum-ulated on the base layers on both sides of the p-n junc-tion 32 and transfer the p-n junction 32 from reverse bias to forward bias resulting in the conducting state.
The process of the transfer to this conducting state is called "turn-on" and its speed is determined by q ~
The operation of thyristors, such as thyristor 10, is general].y as follows. Upon the applica-tion of a principal current, a negative bias is applied to the cathode electrode 24 while a positive bias is applied to the anode electrode 22. At that time, a p-n junction 2~
between the anode emitter region or layer 14 and the n type conductivity ancde base region 12 and a p-n junction 30 between the cathode emitter region 20 and the p type conductivity cathode base region or layer 16 are forwardly biased. A p-n junction 32 between the n type conductivity anode base layer 12 and the p type conductivity cathode base layer 16 is reverse biased.
Theoretically, holes are injected from the gate electrode 26 and electrons are injected from the cathode electrode 24 through the cathode emitter layer 20 into the p type conductivity cathode base layer 16. The injected electrons pass across the p-n ~unction 32 and are col-lected on the n type conductivity anode base layer 12. At - 25 that time, holes from the anode emitter layer or region 1~
are injected into the n type conductivity anode base layer 12 and pass through the anode base layer 12 to be col-lected on the p type conductivity cathode base region 16.
The holes cause electrons from the cathode emitter region to again be injected into the p type conductivity cathode base region 16 through the p-n junction 30. By repeating this process, the holes and electrons are accum-ulated on the base layers on both sides of the p-n junc-tion 32 and transfer the p-n junction 32 from reverse bias to forward bias resulting in the conducting state.
The process of the transfer to this conducting state is called "turn-on" and its speed is determined by q ~
3 48,gl8 the speed at which the electrons from tne cathode emitter region 20 injected into the p type conductiv~t~ cathode base layer or region 16 are transferred to the n type conductivity anode base layer ]2 and a speed at which the holes from the anode emitter region 14 injected into the n type conductivity anode base layer 12 reach the p type conductivity cathode base layer 16.
Upon the application of a reverse bias voltage across the cathode electrode 24 and the anode electrode 22 to interrupt a current, the process in which the conduct-ing state changes to the blocking state is called "turn-off". This is determined by the speed at which holes and electrons remaining in the vicinity of the p-n junction 32 disappear to comple~ely restore the forward blockin~ state in the thyristor.
Conventional thyristors, such as thyristor 10 of Fig. 1, are excellent in their ability to control high electric voltages but are slow in turn-on and turn-off.
SUMMA~Y OF THE INVENTI_ 20The present invention provides for a controlled rectifier comprising an anode emitter region, an anode base regionl a cathode base region and a cathode emitter region, said anode emitter region and said cathode base region being of a first type conductivity and said cathode emitter region and said anode base region being of a second type conductivity, a plurality of gate regions having said first type of conductivity extending from a p-II junction between said cathode base region and said anode base region into said anode base region in a precle-termined pattern and to a depth less than the thickness of said anode base region, another region disposed between said anode emitter region and said anode base region, said another region having said second type of conductivity, said another region being doped to a higher level than said anode base region, a p-n junction between said anode emitter region and said another region, a first electrode affixed to said anode emitter region, and a second elec-trode affixed to only said cathode emitter region g ~ ~ ~3 ~ 48,91 BRIEF DESCRIPTION OF THE D~AWING
For a better understanding of the present in-vention, reference should be had tc> the following detailed description and drawings in which:
5Fig. 1 is a side view, in section, of a prior art thyristor; and Fig. 2 is a side view, in section, of the essen-tial portion of a controllecl rectifier setting forth the teachings of this invention.
10DESCRIPTION OF THE PREFF.RRED EMBODIMENT
The present invention has as its object to pro-vide a semiconductor controlled rectifier having both a high speed and the capability of withstanding voltage by increasing its control speed while increasing resistances to di/dt and dv/dt.
In order to accomplish this object, the present invention is characterized in a semiconductor controlled rectifier consisting of a base layer of an n type conduc-tivity, a p type conducting anode layer and base layer provided on both surfaces of this base layer, and a cath-ode layer of the n type conductivity provided on this base layer of the n type conductivity in that said base layer of the n type conductivity is provided with gate regions of the p type conductivity adjacent to said p type conduc-tivity base layer to be formed into a predetermined pat-tern and a high concentration base region is provided between said n type conductivity base layer and said p type conductivity base layer, said high concentration gate region having an impurity concentration higher than tha-t of said base layer. An embodiment Gf the present inven-tion is described hereinafter.
Fig. 2 is a sectional view of the essential por-tion of a thyristor illustrating an embodiment of the pre-sent invention. The components identical or corresponding to those shown in Fig. 1 use the same reference numerals as in Fig. 1.
~,9~
Upon the application of a reverse bias voltage across the cathode electrode 24 and the anode electrode 22 to interrupt a current, the process in which the conduct-ing state changes to the blocking state is called "turn-off". This is determined by the speed at which holes and electrons remaining in the vicinity of the p-n junction 32 disappear to comple~ely restore the forward blockin~ state in the thyristor.
Conventional thyristors, such as thyristor 10 of Fig. 1, are excellent in their ability to control high electric voltages but are slow in turn-on and turn-off.
SUMMA~Y OF THE INVENTI_ 20The present invention provides for a controlled rectifier comprising an anode emitter region, an anode base regionl a cathode base region and a cathode emitter region, said anode emitter region and said cathode base region being of a first type conductivity and said cathode emitter region and said anode base region being of a second type conductivity, a plurality of gate regions having said first type of conductivity extending from a p-II junction between said cathode base region and said anode base region into said anode base region in a precle-termined pattern and to a depth less than the thickness of said anode base region, another region disposed between said anode emitter region and said anode base region, said another region having said second type of conductivity, said another region being doped to a higher level than said anode base region, a p-n junction between said anode emitter region and said another region, a first electrode affixed to said anode emitter region, and a second elec-trode affixed to only said cathode emitter region g ~ ~ ~3 ~ 48,91 BRIEF DESCRIPTION OF THE D~AWING
For a better understanding of the present in-vention, reference should be had tc> the following detailed description and drawings in which:
5Fig. 1 is a side view, in section, of a prior art thyristor; and Fig. 2 is a side view, in section, of the essen-tial portion of a controllecl rectifier setting forth the teachings of this invention.
10DESCRIPTION OF THE PREFF.RRED EMBODIMENT
The present invention has as its object to pro-vide a semiconductor controlled rectifier having both a high speed and the capability of withstanding voltage by increasing its control speed while increasing resistances to di/dt and dv/dt.
In order to accomplish this object, the present invention is characterized in a semiconductor controlled rectifier consisting of a base layer of an n type conduc-tivity, a p type conducting anode layer and base layer provided on both surfaces of this base layer, and a cath-ode layer of the n type conductivity provided on this base layer of the n type conductivity in that said base layer of the n type conductivity is provided with gate regions of the p type conductivity adjacent to said p type conduc-tivity base layer to be formed into a predetermined pat-tern and a high concentration base region is provided between said n type conductivity base layer and said p type conductivity base layer, said high concentration gate region having an impurity concentration higher than tha-t of said base layer. An embodiment Gf the present inven-tion is described hereinafter.
Fig. 2 is a sectional view of the essential por-tion of a thyristor illustrating an embodiment of the pre-sent invention. The components identical or corresponding to those shown in Fig. 1 use the same reference numerals as in Fig. 1.
~,9~
4~,~18 Controlled rectifier 110 of Fig. 2, as thyristor 10 of Fiy. 1, is comprised of an anode emitter region 14, an anode base region 12 and a cathode emitter region 20.
There is an anode metallic electrode 22 affixed in ohmic electrical contact with anode emitter region 14 and a cathode metallic electrode 24 affixed to cathode emitter region 20 in ohmic electrical contact. A gate electrode 26 is in ohmic electrical contact with the cathode base region 116, which region will be discussed 10 hereinafter. ~'hese are p-n junctions 28, 30 and 32 as in Fig. 1.
The differences in the thyristor 110 over the thyristor 10 of Fig. 1 are gate regions 40 of a p type conductivity, doped to a concentration of from 1018 to 5 x 1021 atoms per cc, extending into the n type conductivity base layer 12 from the p-n junction 32 between regions 12 and cathode base region 116. The region 12 is doped to a level of from 1014 to 1017 atoms per cc. The gate regions 40 are formed into a pectinate or a mesh shape with a longitudinally and transversely fine pattern. This is a p-n junction 44 between regions 40 and region 12.
There is also a base region 42 of an n type conductivity, doped to a concentration of from 1013 to 5 x 1021 atoms per cc, beiween the n type conductivity anode base region 12 and the p type conductivity anode emitter region 14 including an impurity higher in concentration than that in this anode base region 12. In this case, the p type conductivity base region 116 is formed to be suffi-ciently thinner than the p type conductivity base layer 16 in Fig. 1 and its thickness may be formed to be about 1/10 of the conventional structure with an identical withstand-ing voltage capability.
The thickness, WB, of the p type conductivity cathode base region 116 is determined by the ~ollowing relationship:
6 ~,91 Nd~a <Na-WB
wherein: 2a is the spacing between eacil of the gate re-gions 40, Na is the impurity concentration of ti~e p type conductivity base layer 116 and Ncl is the impuriti concen-tration of the n type conductivity base layer 12. Inaddition, the thickness of the p type conductivity base region 116 changes with the mutual spacinys of the gate regions 40, the resistivity of the p type conductivity base layer 116 and voltage applied to the device, it may be formed to be on the order of from 1 to 1/50 of the thickness of such a region in the conventional structure.
In the operation of the device of this inven-tion, as shown in Yig. 2, holes theoretically injected from the gate electrode 26 upon "turn-on" of the device tend to be injected into the cathode emitter region 20 through the p type conductivity base layer 116, but since the gate regions 40 have a high impurity concentration, lol to 5 x 1021 atoms per cc, and are formed in a pecti-nate or mesh shape with the longitudinal and transverse pattern, the gate regions 40 become low in resistance and the holes are quickly transferred to the entire element through these gate regions 40. For this reason, the injection of electrons from the cathode emitter region or layer 20 occurs rapidly and also the injected electrons rapidly pass through the p type conductivity base layer 116, which is thinner than in the conventional structure, resulting in the electrons reaching the n type conductiv-ity base layer 12. As a result, the injection of holes from the anode emitter region or layer 14 is speeded up and a time required for the "turn-on" can be reduced to from 1/2 to 1/10 of the time required for a ~onventional device .
On the other hand, upon interrupting a current, a reverse bias voltage is applied across the cathode electrode 24 and the anode electrode 24. At that time, however, reverse biases are applied to the p-n junctions '.3~
7 48,918 28 and 32 whereas a forward bias is applied to the p-n junction 30 while the latter remains inverted. ~herefore, in the conventional structure, excessive carriers located in the vicinity of the p-n junction 32 must wait for the spontaneous extinction due to the recombination and the time required for the "turn-off" is long. In the present invention, the injection of holes from the anode emitter region 14 into the n type conductivity anode base layer 12 is controlled by the n type conductivity base layer 42 provided between the anode base region 12 and the anode emitter region 14 and it enables a structure to be pro-duced in which by properly selecting the thickness and impurity concentration of the n type conductivity base layer 42, the "turn-on" is effected with the injection of a small quantity of holes. Conse~uently, only a small number of carriers need to be removed during the "turn-off" and this permits an increase in turn-off speed.
As described above, the semiconductor controlled rectifier of the present invention has been made which has the n type conductivity base layer 12 provided with the gate regions 40 of p type conductivity adjacent to the p typ~ conductivity base layer 116 formed into a predeter-mined pattern, and a high concentration base region 42 provided between base layer 12 and the p type conductivity anode layer 14 and having an impurity concentration higher than that of the base layer 12. Accordingly, there is the effect that, by means of said gate regions 40, the thick-ness of the p type conductivity base layer 116 can be sufficiently thinned and that a semiconductor controlled rectifier can be provided having a high speed and a high withstanding voltage.
In specific embodiments built utilizing the structure shown in Fig. 2, n-type region 12 had an impur-ity concentration of 3 ~ 1014 atoms per cc and a thickness35 of 85 m. P-type region 16 had an impurity concentration 3 ,~ ~ ~
8 4~,918 of 1 x 101 atoms pe~ cc and a thickness on the order of 32 m.
The thick of the region 3 between p n junctions 30 and 32 and the spacincJbetween gcltes 40 was as fo;'ows:
There is an anode metallic electrode 22 affixed in ohmic electrical contact with anode emitter region 14 and a cathode metallic electrode 24 affixed to cathode emitter region 20 in ohmic electrical contact. A gate electrode 26 is in ohmic electrical contact with the cathode base region 116, which region will be discussed 10 hereinafter. ~'hese are p-n junctions 28, 30 and 32 as in Fig. 1.
The differences in the thyristor 110 over the thyristor 10 of Fig. 1 are gate regions 40 of a p type conductivity, doped to a concentration of from 1018 to 5 x 1021 atoms per cc, extending into the n type conductivity base layer 12 from the p-n junction 32 between regions 12 and cathode base region 116. The region 12 is doped to a level of from 1014 to 1017 atoms per cc. The gate regions 40 are formed into a pectinate or a mesh shape with a longitudinally and transversely fine pattern. This is a p-n junction 44 between regions 40 and region 12.
There is also a base region 42 of an n type conductivity, doped to a concentration of from 1013 to 5 x 1021 atoms per cc, beiween the n type conductivity anode base region 12 and the p type conductivity anode emitter region 14 including an impurity higher in concentration than that in this anode base region 12. In this case, the p type conductivity base region 116 is formed to be suffi-ciently thinner than the p type conductivity base layer 16 in Fig. 1 and its thickness may be formed to be about 1/10 of the conventional structure with an identical withstand-ing voltage capability.
The thickness, WB, of the p type conductivity cathode base region 116 is determined by the ~ollowing relationship:
6 ~,91 Nd~a <Na-WB
wherein: 2a is the spacing between eacil of the gate re-gions 40, Na is the impurity concentration of ti~e p type conductivity base layer 116 and Ncl is the impuriti concen-tration of the n type conductivity base layer 12. Inaddition, the thickness of the p type conductivity base region 116 changes with the mutual spacinys of the gate regions 40, the resistivity of the p type conductivity base layer 116 and voltage applied to the device, it may be formed to be on the order of from 1 to 1/50 of the thickness of such a region in the conventional structure.
In the operation of the device of this inven-tion, as shown in Yig. 2, holes theoretically injected from the gate electrode 26 upon "turn-on" of the device tend to be injected into the cathode emitter region 20 through the p type conductivity base layer 116, but since the gate regions 40 have a high impurity concentration, lol to 5 x 1021 atoms per cc, and are formed in a pecti-nate or mesh shape with the longitudinal and transverse pattern, the gate regions 40 become low in resistance and the holes are quickly transferred to the entire element through these gate regions 40. For this reason, the injection of electrons from the cathode emitter region or layer 20 occurs rapidly and also the injected electrons rapidly pass through the p type conductivity base layer 116, which is thinner than in the conventional structure, resulting in the electrons reaching the n type conductiv-ity base layer 12. As a result, the injection of holes from the anode emitter region or layer 14 is speeded up and a time required for the "turn-on" can be reduced to from 1/2 to 1/10 of the time required for a ~onventional device .
On the other hand, upon interrupting a current, a reverse bias voltage is applied across the cathode electrode 24 and the anode electrode 24. At that time, however, reverse biases are applied to the p-n junctions '.3~
7 48,918 28 and 32 whereas a forward bias is applied to the p-n junction 30 while the latter remains inverted. ~herefore, in the conventional structure, excessive carriers located in the vicinity of the p-n junction 32 must wait for the spontaneous extinction due to the recombination and the time required for the "turn-off" is long. In the present invention, the injection of holes from the anode emitter region 14 into the n type conductivity anode base layer 12 is controlled by the n type conductivity base layer 42 provided between the anode base region 12 and the anode emitter region 14 and it enables a structure to be pro-duced in which by properly selecting the thickness and impurity concentration of the n type conductivity base layer 42, the "turn-on" is effected with the injection of a small quantity of holes. Conse~uently, only a small number of carriers need to be removed during the "turn-off" and this permits an increase in turn-off speed.
As described above, the semiconductor controlled rectifier of the present invention has been made which has the n type conductivity base layer 12 provided with the gate regions 40 of p type conductivity adjacent to the p typ~ conductivity base layer 116 formed into a predeter-mined pattern, and a high concentration base region 42 provided between base layer 12 and the p type conductivity anode layer 14 and having an impurity concentration higher than that of the base layer 12. Accordingly, there is the effect that, by means of said gate regions 40, the thick-ness of the p type conductivity base layer 116 can be sufficiently thinned and that a semiconductor controlled rectifier can be provided having a high speed and a high withstanding voltage.
In specific embodiments built utilizing the structure shown in Fig. 2, n-type region 12 had an impur-ity concentration of 3 ~ 1014 atoms per cc and a thickness35 of 85 m. P-type region 16 had an impurity concentration 3 ,~ ~ ~
8 4~,918 of 1 x 101 atoms pe~ cc and a thickness on the order of 32 m.
The thick of the region 3 between p n junctions 30 and 32 and the spacincJbetween gcltes 40 was as fo;'ows:
5 Spacing Between Spacing Between p-n Ju~ctions 30-32 Gates 40 5.5 m 20 m 4.1 m 15 m 2.7 m 10 m
Claims (3)
1. A controlled rectifier comprising an anode emitter region, an anode base region, a cathode base region and a cathode emitter region, said anode emitter region and said cathode base region being of a first type conductivity and said cathode emitter region and said anode base region being of a second type conductivity, a plurality of gate regions having said first type of con-ductivity extending from a p-n junction between said cathode base region and said anode base region into said anode base region in a predetermined pattern and to a depth less than the thickness of said anode base region, another region disposed between said anode emitter region and said anode base region, said another region having said second type of conductivity, said another region being doped to a higher level than said anode base region, a p-n junction between said anode emitter region and said another region, a first electrode affixed to said anode emitter region, and a second electrode affixed to only said cathode emitter region and a gate electrode affixed to said cathode base region.
2. The controlled rectifier of claim 1 in which the plurality of gate regions extending into said anode base region are doped to a higher concentration than said cathode base region.
3. The controlled rectifier of claim 2 in which the gate regions extending into said base region are formed in a longitudinal and transverse pectinate pattern.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12752779A JPS6013311B2 (en) | 1979-10-01 | 1979-10-01 | Semiconductor controlled rectifier |
| JP54-127527 | 1979-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1159158A true CA1159158A (en) | 1983-12-20 |
Family
ID=14962213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000361937A Expired CA1159158A (en) | 1979-10-01 | 1980-10-01 | Semiconductor controlled rectifier |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6013311B2 (en) |
| CA (1) | CA1159158A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654688A (en) * | 1983-12-29 | 1987-03-31 | Fujitsu Limited | Semiconductor device having a transistor with increased current amplification factor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE53895B1 (en) * | 1981-11-23 | 1989-04-12 | Gen Electric | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
| GB8901342D0 (en) * | 1989-01-21 | 1989-03-15 | Lucas Ind Plc | Semiconductor device |
| US7638816B2 (en) | 2007-08-28 | 2009-12-29 | Littelfuse, Inc. | Epitaxial surge protection device |
-
1979
- 1979-10-01 JP JP12752779A patent/JPS6013311B2/en not_active Expired
-
1980
- 1980-10-01 CA CA000361937A patent/CA1159158A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654688A (en) * | 1983-12-29 | 1987-03-31 | Fujitsu Limited | Semiconductor device having a transistor with increased current amplification factor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6013311B2 (en) | 1985-04-06 |
| JPS5650565A (en) | 1981-05-07 |
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