JPS55125666A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55125666A
JPS55125666A JP3450079A JP3450079A JPS55125666A JP S55125666 A JPS55125666 A JP S55125666A JP 3450079 A JP3450079 A JP 3450079A JP 3450079 A JP3450079 A JP 3450079A JP S55125666 A JPS55125666 A JP S55125666A
Authority
JP
Japan
Prior art keywords
region
layer
diode
type
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3450079A
Other languages
Japanese (ja)
Inventor
Koichi Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3450079A priority Critical patent/JPS55125666A/en
Publication of JPS55125666A publication Critical patent/JPS55125666A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To readily perform a circuit design with undercoating metal material to be coated under electrode wire in a semiconductor device by employing difference undercoating metal materials under the electrode wires when forming a Schottky barrier diode having difference voltage vs. current characteristics on the same semiconductor substrate. CONSTITUTION:An n<+>-type buried region 4 is diffused in predetermined region on a semiconductor substrate 1, an n-type layer 2 is epitaxially grown to become a collector on the entire surface including the region 4, a plurality of p<+>-type regions 3 are diffused to isolate the layer 2 into a diode region including the region 3 and a diode region including no layer 3 is an island state. Then, a p-type base region 6, an n-type emitter region 7 and a contact region and the like are formed in the island-like layer 2 including the region 4, an insulating film 8 is coated thereon, openings are perforated thereat, and aluminum electrode wires 11 making contact through the openings with the respective regions are coated thereon. At this time Ti.W alloy 10 is employed for the undercoating metal material as a clamp diode for a transistor. On the other hand, when an aluminum electrode wire 11 is formed also on the other island layer 2, Pt.Si layer is employed for the undercoating metal 9 as a normal diode.
JP3450079A 1979-03-23 1979-03-23 Semiconductor device Pending JPS55125666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3450079A JPS55125666A (en) 1979-03-23 1979-03-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3450079A JPS55125666A (en) 1979-03-23 1979-03-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55125666A true JPS55125666A (en) 1980-09-27

Family

ID=12415967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3450079A Pending JPS55125666A (en) 1979-03-23 1979-03-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55125666A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948958A (en) * 1982-08-12 1984-03-21 シ−メンス・アクチエンゲゼルシヤフト Semiconductor integrated circuit
JPS5984468A (en) * 1982-11-05 1984-05-16 Nec Corp Semiconductor device
JPS59119762A (en) * 1982-12-20 1984-07-11 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Buried schottky clamp type transistor
US4628338A (en) * 1981-10-29 1986-12-09 Fujitsu Limited Semiconductor device
JPS63237437A (en) * 1987-03-25 1988-10-03 Nec Corp Monolithic integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051282A (en) * 1973-09-07 1975-05-08
JPS5055278A (en) * 1973-09-12 1975-05-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051282A (en) * 1973-09-07 1975-05-08
JPS5055278A (en) * 1973-09-12 1975-05-15

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628338A (en) * 1981-10-29 1986-12-09 Fujitsu Limited Semiconductor device
JPS5948958A (en) * 1982-08-12 1984-03-21 シ−メンス・アクチエンゲゼルシヤフト Semiconductor integrated circuit
JPH0241902B2 (en) * 1982-08-12 1990-09-19
JPS5984468A (en) * 1982-11-05 1984-05-16 Nec Corp Semiconductor device
JPS59119762A (en) * 1982-12-20 1984-07-11 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Buried schottky clamp type transistor
JPH0578173B2 (en) * 1982-12-20 1993-10-28 Fairchild Camera Instr Co
JPS63237437A (en) * 1987-03-25 1988-10-03 Nec Corp Monolithic integrated circuit

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