JPS5459088A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- JPS5459088A JPS5459088A JP12516177A JP12516177A JPS5459088A JP S5459088 A JPS5459088 A JP S5459088A JP 12516177 A JP12516177 A JP 12516177A JP 12516177 A JP12516177 A JP 12516177A JP S5459088 A JPS5459088 A JP S5459088A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- collector
- gate
- current
- logic operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To achieve a high-integration and high-speed I<2>L device by using the bias diode to reduce the base current ad then the effect of the base resistance. CONSTITUTION:P-type layer 3 and N-type layer 4 are formed selectively to N- epitaxial layer 2 on N<+>-type substrate 1, and collector electrode 6 to be the gate output, base electrode 7 to be the gate input and injector electrode 8 are provided respectively. Particularly, collector C' provided under electrode 7 functions as the bias diode. With reduction of the C' area down to half of other collectors C1-C3 featuring the logic operation, the collector current featuring the logic operation becomes double the injector current. Thus, the sufficiently stable logic operation is ensured regardless of some difference of the collector current. In this constitution, the increase of the gate area is not required since a small bias diode only is added under the gate electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12516177A JPS5459088A (en) | 1977-10-20 | 1977-10-20 | Integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12516177A JPS5459088A (en) | 1977-10-20 | 1977-10-20 | Integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5459088A true JPS5459088A (en) | 1979-05-12 |
Family
ID=14903377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12516177A Pending JPS5459088A (en) | 1977-10-20 | 1977-10-20 | Integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5459088A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS648726A (en) * | 1987-07-01 | 1989-01-12 | Matsushita Electronics Corp | Semiconductor integrated circuit |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5181583A (en) * | 1975-01-16 | 1976-07-16 | Tokyo Shibaura Electric Co | |
JPS529384A (en) * | 1975-07-11 | 1977-01-24 | Nippon Telegr & Teleph Corp <Ntt> | Transistor circuit device |
JPS5215256A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Integrated semiconductor logical circuit |
JPS5220755A (en) * | 1975-08-09 | 1977-02-16 | Toshiba Corp | Gate circuit |
JPS5220756A (en) * | 1975-06-30 | 1977-02-16 | Signetics Corp | Logical circuit and ic semiconductor |
JPS5220778A (en) * | 1975-08-09 | 1977-02-16 | Toshiba Corp | Semi-conductor unit |
JPS5266366A (en) * | 1975-12-01 | 1977-06-01 | Toshiba Corp | Semiconductor logic circuit |
JPS5266365A (en) * | 1975-12-01 | 1977-06-01 | Toshiba Corp | Semiconductor logic circuit |
-
1977
- 1977-10-20 JP JP12516177A patent/JPS5459088A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5181583A (en) * | 1975-01-16 | 1976-07-16 | Tokyo Shibaura Electric Co | |
JPS5220756A (en) * | 1975-06-30 | 1977-02-16 | Signetics Corp | Logical circuit and ic semiconductor |
JPS529384A (en) * | 1975-07-11 | 1977-01-24 | Nippon Telegr & Teleph Corp <Ntt> | Transistor circuit device |
JPS5215256A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Integrated semiconductor logical circuit |
JPS5220755A (en) * | 1975-08-09 | 1977-02-16 | Toshiba Corp | Gate circuit |
JPS5220778A (en) * | 1975-08-09 | 1977-02-16 | Toshiba Corp | Semi-conductor unit |
JPS5266366A (en) * | 1975-12-01 | 1977-06-01 | Toshiba Corp | Semiconductor logic circuit |
JPS5266365A (en) * | 1975-12-01 | 1977-06-01 | Toshiba Corp | Semiconductor logic circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS648726A (en) * | 1987-07-01 | 1989-01-12 | Matsushita Electronics Corp | Semiconductor integrated circuit |
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