JPS63124762U - - Google Patents
Info
- Publication number
- JPS63124762U JPS63124762U JP1414587U JP1414587U JPS63124762U JP S63124762 U JPS63124762 U JP S63124762U JP 1414587 U JP1414587 U JP 1414587U JP 1414587 U JP1414587 U JP 1414587U JP S63124762 U JPS63124762 U JP S63124762U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- base layer
- groove
- layer
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第１図はこの考案に係る縦形ＭＯＳＦＥＴの一
実施例を示す縦断面図、第２図は同上一実施例の
製造工程の一例を示す工程図、第３図はこの考案
の他の実施例を示す縦断面図、第４図は従来の縦
形ＭＯＳＦＥＴを示す縦断面図、第５図は他の従
来例を示す縦断面図である。
１：高濃度ｎ形基板、２：ｎ形層、３：ｐ形ベ
ース層、４：ｎ＋ソース領域、５，６：第１、第
２の溝、７：ゲート絶縁膜、８：チヤネル、９：
ゲート電極、１０：高濃度ｐ形基板、１１：コン
タクト部、１４：ソース電極、１５：ドレイン電
極。
Fig. 1 is a vertical cross-sectional view showing one embodiment of a vertical MOSFET according to this invention, Fig. 2 is a process diagram showing an example of the manufacturing process of the same embodiment, and Fig. 3 is a diagram showing another embodiment of this invention. FIG. 4 is a vertical cross-sectional view showing a conventional vertical MOSFET, and FIG. 5 is a vertical cross-sectional view showing another conventional example. 1: High concentration n-type substrate, 2: N-type layer, 3: P-type base layer, 4: N + source region, 5, 6: First and second grooves, 7: Gate insulating film, 8: Channel, 9:
Gate electrode, 10: High concentration p-type substrate, 11: Contact portion, 14: Source electrode, 15: Drain electrode.
Claims (1)
形のベース層と、 該ベース層の表面側に形成された第１導電形の
ソース領域と、 該ソース領域および前記ベース層を貫通して前
記第１導電形層に達する第１の溝の内壁面に形成
されたゲート絶縁膜と、 該ゲート絶縁膜を介して前記第１の溝に埋込ま
れ前記ベース層にチヤネルを誘起させる多結晶シ
リコンからなるゲート電極と、 前記ソース領域に接続されるとともに前記第１
の溝の近傍に該第１の溝と略平行に穿設された第
２の溝に埋込まれた第２導電形の多結晶シリコン
からなるコンタクト部を介して前記ベース層に接
続されるソース電極と を有することを特徴とする縦形ＭＯＳＦＥＴ。[Claims for Utility Model Registration] A first conductivity type layer functioning as a drain, a second conductivity type base layer formed on the surface side of the first conductivity type layer, and a second conductivity type base layer formed on the surface side of the base layer. a source region of a first conductivity type; a gate insulating film formed on an inner wall surface of a first trench penetrating the source region and the base layer to reach the first conductivity type layer; a gate electrode made of polycrystalline silicon that is buried in the first trench through the gate electrode and that induces a channel in the base layer;
a source connected to the base layer through a contact portion made of polycrystalline silicon of a second conductivity type and embedded in a second groove formed near the groove and substantially parallel to the first groove; A vertical MOSFET characterized by having an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1414587U JPS63124762U (en) | 1987-02-04 | 1987-02-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1414587U JPS63124762U (en) | 1987-02-04 | 1987-02-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63124762U true JPS63124762U (en) | 1988-08-15 |
Family
ID=30803858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1414587U Pending JPS63124762U (en) | 1987-02-04 | 1987-02-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63124762U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02144971A (en) * | 1988-11-28 | 1990-06-04 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPH06224435A (en) * | 1992-12-02 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | Metal oxide semiconductor heterojunction field-effect transistor (moshfet) |
| JP2001284584A (en) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
| JP2002270841A (en) * | 2001-03-13 | 2002-09-20 | Denso Corp | Semiconductor device and manufacturing method of the same |
| JP2012079795A (en) * | 2010-09-30 | 2012-04-19 | Denso Corp | Semiconductor device having junction field-effect transistor and method of manufacturing the same |
-
1987
- 1987-02-04 JP JP1414587U patent/JPS63124762U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02144971A (en) * | 1988-11-28 | 1990-06-04 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPH06224435A (en) * | 1992-12-02 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | Metal oxide semiconductor heterojunction field-effect transistor (moshfet) |
| JP2001284584A (en) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
| JP2002270841A (en) * | 2001-03-13 | 2002-09-20 | Denso Corp | Semiconductor device and manufacturing method of the same |
| JP2012079795A (en) * | 2010-09-30 | 2012-04-19 | Denso Corp | Semiconductor device having junction field-effect transistor and method of manufacturing the same |
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