JPS6466966A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS6466966A
JPS6466966A JP22464687A JP22464687A JPS6466966A JP S6466966 A JPS6466966 A JP S6466966A JP 22464687 A JP22464687 A JP 22464687A JP 22464687 A JP22464687 A JP 22464687A JP S6466966 A JPS6466966 A JP S6466966A
Authority
JP
Japan
Prior art keywords
oxide film
recessed
channel
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22464687A
Other languages
Japanese (ja)
Other versions
JPH065751B2 (en
Inventor
Isayoshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22464687A priority Critical patent/JPH065751B2/en
Publication of JPS6466966A publication Critical patent/JPS6466966A/en
Publication of JPH065751B2 publication Critical patent/JPH065751B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To form a transistor having an effective channel width larger than that on a plane surface, by forming a recessed part in a channel part of a MOS transistor and using the side wall of the recessed part effectively. CONSTITUTION:A field oxide film 2 is formed on a non-active region of a P-type silicon substrate 1 and recessed parts 3a-3d several mum in depth are provided at an active region. An oxide film is formed on the side and bottom surfaces of the recessed and on the silicon substrate, and this oxide film serves as a gate oxide film 4. A source region 5a and a drain region 5b is formed of an N<+> type impurity diffusion layer, and a gate electrode 7 is formed of a polycrystalline silicon film. Thus, an N channel MOS transistor is provided. The N<+> type impurity diffusion layer is also formed on a side surface and a bottom surface other than the channel part of the recessed parts 3a to 3d, so that it is possible to improve a degree of integration.
JP22464687A 1987-09-07 1987-09-07 Insulated gate field effect transistor Expired - Lifetime JPH065751B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22464687A JPH065751B2 (en) 1987-09-07 1987-09-07 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22464687A JPH065751B2 (en) 1987-09-07 1987-09-07 Insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS6466966A true JPS6466966A (en) 1989-03-13
JPH065751B2 JPH065751B2 (en) 1994-01-19

Family

ID=16816980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22464687A Expired - Lifetime JPH065751B2 (en) 1987-09-07 1987-09-07 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPH065751B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675164A (en) * 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
US7883969B2 (en) 2003-04-23 2011-02-08 Samsung Electronics Co., Ltd. Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675164A (en) * 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
US7883969B2 (en) 2003-04-23 2011-02-08 Samsung Electronics Co., Ltd. Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same

Also Published As

Publication number Publication date
JPH065751B2 (en) 1994-01-19

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