JPS6451662A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS6451662A JPS6451662A JP20827487A JP20827487A JPS6451662A JP S6451662 A JPS6451662 A JP S6451662A JP 20827487 A JP20827487 A JP 20827487A JP 20827487 A JP20827487 A JP 20827487A JP S6451662 A JPS6451662 A JP S6451662A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- length
- gate
- transistor
- longer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To constitute a three-dimensional off set, and enable the high density integration and the high breakdown voltage operation, by arranging a trench between the gate region and the drain region on an Si substrate, and making the bottom and a part of the side-wall along the trench as off-set part. CONSTITUTION:An off-set part 6 is constituted of an impurity diffusion layer being an N<-> diffusion layer aII over the side-wall and the bottom part of a trench 7. On an Si substrate 1, an N<+> drain region 2 is arranged on the opposite side of the trench 7 to a gate electrode 5, and a transistor is formed whose off set length is longer than the plane size. Therefore a transistor having an off-set whose effective length is longer than the usual length although a plane off-set length is short, is obtained. As a result, the distance between gate and drain becomes short, so that the high density integration and the high breakdown voltage operation are enabled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20827487A JPS6451662A (en) | 1987-08-24 | 1987-08-24 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20827487A JPS6451662A (en) | 1987-08-24 | 1987-08-24 | Semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6451662A true JPS6451662A (en) | 1989-02-27 |
Family
ID=16553523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20827487A Pending JPS6451662A (en) | 1987-08-24 | 1987-08-24 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6451662A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010002670A (en) * | 1999-06-16 | 2001-01-15 | 김영환 | Method for Manufacturing Semiconductor Device the same |
| JP2003249646A (en) * | 2001-12-18 | 2003-09-05 | Fuji Electric Co Ltd | Semiconductor device |
| US6730961B2 (en) | 2001-12-18 | 2004-05-04 | Fuji Electric Co., Ltd. | Semiconductor device |
| US6861702B2 (en) | 2001-05-11 | 2005-03-01 | Fuji Electric Co., Ltd. | Semiconductor device |
| US7049202B2 (en) | 2001-05-18 | 2006-05-23 | Fuji Electric Co., Ltd. | Method of manufacturing semiconductor device |
| JP2007080956A (en) * | 2005-09-12 | 2007-03-29 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
-
1987
- 1987-08-24 JP JP20827487A patent/JPS6451662A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010002670A (en) * | 1999-06-16 | 2001-01-15 | 김영환 | Method for Manufacturing Semiconductor Device the same |
| US6861702B2 (en) | 2001-05-11 | 2005-03-01 | Fuji Electric Co., Ltd. | Semiconductor device |
| US7049202B2 (en) | 2001-05-18 | 2006-05-23 | Fuji Electric Co., Ltd. | Method of manufacturing semiconductor device |
| JP2003249646A (en) * | 2001-12-18 | 2003-09-05 | Fuji Electric Co Ltd | Semiconductor device |
| US6730961B2 (en) | 2001-12-18 | 2004-05-04 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP2007080956A (en) * | 2005-09-12 | 2007-03-29 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
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