JPS5595366A - Insulated-gate field-effect transistor - Google Patents

Insulated-gate field-effect transistor

Info

Publication number
JPS5595366A
JPS5595366A JP261079A JP261079A JPS5595366A JP S5595366 A JPS5595366 A JP S5595366A JP 261079 A JP261079 A JP 261079A JP 261079 A JP261079 A JP 261079A JP S5595366 A JPS5595366 A JP S5595366A
Authority
JP
Japan
Prior art keywords
depression
gate
polycrystalline
film
wall surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP261079A
Other languages
Japanese (ja)
Other versions
JPS6159543B2 (en
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP261079A priority Critical patent/JPS5595366A/en
Publication of JPS5595366A publication Critical patent/JPS5595366A/en
Publication of JPS6159543B2 publication Critical patent/JPS6159543B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a FET with short channel easily and also a large mutual inductance without enlarging the area by determining the channel length by controlling the width of an epitaxial layer and the depth of impurity diffusion.
CONSTITUTION: On an n-type semiconductor substrate 10, a laminate of epitaxial layers of p, n, p, n, 11∼14 are grown. By operating anisotropic etching, V-shaped depressions 15 and 16 are cut into substrate 10. Next, while only the surface of depression 16 is being exposed, depression 15 and the top part are covered with oxide film 17. By using film 17 as a mask, a p-type impurity is diffused on the wall surface of depression 16, and thereby the function of a channel stopper is provided. Subsequently, on the bottom of depression 15, where it is intended to form a dual gate structure, the 1st gate 20, made of polycrystalline Si, is formed via oxide film 18. On top of this and expanding from the wall surface to the top part of film 18, polycrystalline the 2nd gate 22 is provided. Next, polycrystalline electrode wiring 24 is fitted to the 1st gate 20, and electrode 25 is provided in depression 16.
COPYRIGHT: (C)1980,JPO&Japio
JP261079A 1979-01-13 1979-01-13 Insulated-gate field-effect transistor Granted JPS5595366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP261079A JPS5595366A (en) 1979-01-13 1979-01-13 Insulated-gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP261079A JPS5595366A (en) 1979-01-13 1979-01-13 Insulated-gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5595366A true JPS5595366A (en) 1980-07-19
JPS6159543B2 JPS6159543B2 (en) 1986-12-17

Family

ID=11534157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP261079A Granted JPS5595366A (en) 1979-01-13 1979-01-13 Insulated-gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5595366A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
US4571512A (en) * 1982-06-21 1986-02-18 Eaton Corporation Lateral bidirectional shielded notch FET
US4622569A (en) * 1984-06-08 1986-11-11 Eaton Corporation Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0287751U (en) * 1988-12-21 1990-07-11

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US4571512A (en) * 1982-06-21 1986-02-18 Eaton Corporation Lateral bidirectional shielded notch FET
US4622569A (en) * 1984-06-08 1986-11-11 Eaton Corporation Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor

Also Published As

Publication number Publication date
JPS6159543B2 (en) 1986-12-17

Similar Documents

Publication Publication Date Title
JPS6450554A (en) Manufacture of complementary semiconductor device
JPS5766674A (en) Semiconductor device
JPS5681972A (en) Mos type field effect transistor
JPS5586151A (en) Manufacture of semiconductor integrated circuit
JPS54112179A (en) Semiconductor device
JPS5595366A (en) Insulated-gate field-effect transistor
JPH06342804A (en) Bipolar transistor and its manufacture
JPS56108255A (en) Semiconductor integrated circuit
JPS5619653A (en) Bipolar cmos semiconductor device and manufacture thereof
GB1325082A (en) Semiconductor devices
JPS55132062A (en) Semiconductor memory device
JPS554964A (en) Manufacture of mos type semiconductor
JPS5456381A (en) Production of semiconductor device
JPS5745274A (en) Semiconductor device
JPS5574181A (en) Preparing junction type field effect transistor
JPS5574182A (en) Preparing junction type field effect transistor
JPS6466966A (en) Insulated gate field effect transistor
JPS6415974A (en) Semiconductor device
JPS54101289A (en) Semiconductor device
JPS54146976A (en) Junction type field effect transistor and its production
JPS5492180A (en) Manufacture of semiconductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS5615077A (en) Manufacture of semiconductor device
JPS5526682A (en) Semiconductor integrated circuit device provided with lateral transistor
JPS57173965A (en) Semiconductor device