JPH0282034U - - Google Patents
Info
- Publication number
- JPH0282034U JPH0282034U JP16168788U JP16168788U JPH0282034U JP H0282034 U JPH0282034 U JP H0282034U JP 16168788 U JP16168788 U JP 16168788U JP 16168788 U JP16168788 U JP 16168788U JP H0282034 U JPH0282034 U JP H0282034U
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- transistor
- resistor
- type region
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 150000003376 silicon Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第１図はこの考案の一実施例に係る抵抗内蔵型
トランジスタの構成を示す正面断面図、第２図は
同実施例における製造方法を説明するための説明
図、第３図は従来の抵抗内蔵型トランジスタの構
成を示す構成図、第４図は抵抗内蔵型トランジス
タの等価回路を示す回路図である。
１０……シリコン基板、Ｒ……抵抗パターン。
Fig. 1 is a front sectional view showing the structure of a transistor with a built-in resistor according to an embodiment of the invention, Fig. 2 is an explanatory diagram for explaining the manufacturing method of the same embodiment, and Fig. 3 is a conventional transistor with a built-in resistor. FIG. 4 is a circuit diagram showing an equivalent circuit of a transistor with a built-in resistor. 10...Silicon substrate, R...Resistance pattern.
Claims (1)
ンジスタに形成された単一のシリコン基板と、 このシリコン基板に形成された抵抗パターンと
、を有し、 この抵抗パターンをシリコン基板に孔設された
溝状のトレンチに充填されたポリシリコンによつ
て形成することを特徴とする抵抗内蔵型トランジ
スタ。[Claims for Utility Model Registration] A single silicon substrate having a predetermined N-type region and P-type region, a part of which is formed into a transistor, and a resistor pattern formed on this silicon substrate. , A transistor with a built-in resistor, characterized in that the resistor pattern is formed by polysilicon filled in a groove-shaped trench formed in a silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16168788U JPH0282034U (en) | 1988-12-13 | 1988-12-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16168788U JPH0282034U (en) | 1988-12-13 | 1988-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0282034U true JPH0282034U (en) | 1990-06-25 |
Family
ID=31444849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16168788U Pending JPH0282034U (en) | 1988-12-13 | 1988-12-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0282034U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008294301A (en) * | 2007-05-25 | 2008-12-04 | Mitsubishi Electric Corp | Semiconductor device |
| JP2013062523A (en) * | 2012-11-13 | 2013-04-04 | Mitsubishi Electric Corp | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62105461A (en) * | 1985-11-01 | 1987-05-15 | Matsushita Electric Ind Co Ltd | Semiconductor device |
-
1988
- 1988-12-13 JP JP16168788U patent/JPH0282034U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62105461A (en) * | 1985-11-01 | 1987-05-15 | Matsushita Electric Ind Co Ltd | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008294301A (en) * | 2007-05-25 | 2008-12-04 | Mitsubishi Electric Corp | Semiconductor device |
| US9484444B2 (en) | 2007-05-25 | 2016-11-01 | Mitsubishi Electric Corporation | Semiconductor device with a resistance element in a trench |
| JP2013062523A (en) * | 2012-11-13 | 2013-04-04 | Mitsubishi Electric Corp | Semiconductor device |