JPS5926267U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5926267U JPS5926267U JP2622483U JP2622483U JPS5926267U JP S5926267 U JPS5926267 U JP S5926267U JP 2622483 U JP2622483 U JP 2622483U JP 2622483 U JP2622483 U JP 2622483U JP S5926267 U JPS5926267 U JP S5926267U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- region
- crystal semiconductor
- crystal
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案によるトランジスタの勢造工程を示す断
面図、第２図は本考案による半導体集積回路の製造工程
を示す断面図である。
記号の説明、第１図、１・・・Ｐ型基板、２・・・Ｎ型
エピタキシャル結晶、３・・・酸化膜、４・・・エミッ
タ領域（多孔質結晶）、５・・・単結晶と多孔質結晶と
の境界面、６・・・コレクタ・ベース接合面、７・・・
ベース領域（単結晶）。第２図、２１・・・Ｐ型基板、
２２−・・埋込みｎ土層、２３−・・埋込みＰ十層、２
４・・・Ｎ型エピタキシャル層、２５′・・・絶縁分離
領域、２６・・・酸化膜、２Ｂ・・・単結晶と多孔質結
晶との境界面、２９・・・エミッタ領域、３０・・・コ
レクタリード領域、３１・・・ベース領域、３２・・・
エミッタ領域。FIG. 1 is a cross-sectional view showing a process for manufacturing a transistor according to the present invention, and FIG. 2 is a cross-sectional view showing a process for manufacturing a semiconductor integrated circuit according to the present invention. Explanation of symbols, Fig. 1, 1...P type substrate, 2...N type epitaxial crystal, 3...Oxide film, 4...Emitter region (porous crystal), 5...Single crystal interface between and porous crystal, 6... collector-base junction surface, 7...
Base region (single crystal). FIG. 2, 21...P-type substrate,
22-... Embedded n soil layer, 23-... Embedded P 10 layer, 2
4... N-type epitaxial layer, 25'... Insulating isolation region, 26... Oxide film, 2B... Interface between single crystal and porous crystal, 29... Emitter region, 30... - Collector lead area, 31...Base area, 32...
emitter area.
Claims (1)
成され且つ単結晶中における不適物の拡散速度よりも大
きい拡散速度を有する領域と、該領域の底面を含む前記
単結晶半導体層との接触面すべてを取り囲むような前記
単結晶半導体層側に形成されたＰＮ接合で区画される他
導電型半導体領域とを有する半導体装置において、前記
他導電型半導体領域は前記単結晶半導体層における実質
的に均一な不純物濃度分布を有する領域部分との゛
みＰＮ接合を形成することを特徴とする半導体装置。The single-crystal semiconductor layer includes a single-crystal semiconductor layer of one conductivity type, a region formed in the single-crystal semiconductor layer and having a diffusion rate higher than a diffusion rate of unsuitable substances in the single-crystal, and a bottom surface of the region. In the semiconductor device, the other conductivity type semiconductor region is defined by a PN junction formed on the single crystal semiconductor layer side so as to surround all the contact surfaces with the single crystal semiconductor layer. With a region having a substantially uniform impurity concentration distribution
A semiconductor device characterized in that it forms a PN junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2622483U JPS5926267U (en) | 1983-02-24 | 1983-02-24 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2622483U JPS5926267U (en) | 1983-02-24 | 1983-02-24 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5926267U true JPS5926267U (en) | 1984-02-18 |
Family
ID=30157160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2622483U Pending JPS5926267U (en) | 1983-02-24 | 1983-02-24 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5926267U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235229U (en) * | 1985-08-21 | 1987-03-02 |
-
1983
- 1983-02-24 JP JP2622483U patent/JPS5926267U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235229U (en) * | 1985-08-21 | 1987-03-02 |
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