GB1529562A - Semiconductor devices and circuits - Google Patents
Semiconductor devices and circuitsInfo
- Publication number
- GB1529562A GB1529562A GB5300975A GB5300975A GB1529562A GB 1529562 A GB1529562 A GB 1529562A GB 5300975 A GB5300975 A GB 5300975A GB 5300975 A GB5300975 A GB 5300975A GB 1529562 A GB1529562 A GB 1529562A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- base
- schottky
- input
- diode forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
1529562 Integrated injection logic device TOKYO SHIBAURA ELECTRIC CO Ltd 29 Dec 1975 53009/75 Heading H1K An integrated injection logic device, as shown in Fig. 1A for example, comprises a substrate 11 of one conductivity type carrying a layer 12 of the opposite type through which extends an isolating ring 14 of the one type in which is formed an opposite type zone 15 which with the ring and the isolated region 12A defines a lateral injection transistor. The substrate and layer define with further zone 17 of the one conductivity type a complementary inverted vertical transistor the collector zone 17 of which is contacted by a Schottky-diode forming electrode while its base is contacted by an ohmic or, as shown, a Schottky-diode forming electrode 19E. In the Fig. 1A embodiment the vertical transistor has two identical collector zones and its base is contacted by three Schottky-diode forming input electrodes to provide with the connections shown, a multi-input and output NAND circuit. One variant of this has only a single collector zone provided with a pair of Schottky-diode forming output electrodes. In a modification of either for use as a multioutput inverter the input diodes on the base zone are replaced by a single input electrode making ohmic contact with the base via a P + diffusion and additional collectors and/or output diodes provided. To reduce minority carrier accumulation in the base an additional N+ collector zone may be provided overlapping the P+ diffusion and connected to the input electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5300975A GB1529562A (en) | 1975-12-29 | 1975-12-29 | Semiconductor devices and circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5300975A GB1529562A (en) | 1975-12-29 | 1975-12-29 | Semiconductor devices and circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1529562A true GB1529562A (en) | 1978-10-25 |
Family
ID=10466263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5300975A Expired GB1529562A (en) | 1975-12-29 | 1975-12-29 | Semiconductor devices and circuits |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1529562A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112993015A (en) * | 2021-02-26 | 2021-06-18 | 西安微电子技术研究所 | Collector region double-diffusion-based high early voltage transverse PNP transistor and preparation method thereof |
-
1975
- 1975-12-29 GB GB5300975A patent/GB1529562A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112993015A (en) * | 2021-02-26 | 2021-06-18 | 西安微电子技术研究所 | Collector region double-diffusion-based high early voltage transverse PNP transistor and preparation method thereof |
| CN112993015B (en) * | 2021-02-26 | 2023-02-07 | 西安微电子技术研究所 | Collector region double-diffusion-based high early voltage transverse PNP transistor and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19951228 |