CA1002208A - Semiconductor schottky barrier device - Google Patents

Semiconductor schottky barrier device

Info

Publication number
CA1002208A
CA1002208A CA203,594A CA203594A CA1002208A CA 1002208 A CA1002208 A CA 1002208A CA 203594 A CA203594 A CA 203594A CA 1002208 A CA1002208 A CA 1002208A
Authority
CA
Canada
Prior art keywords
schottky barrier
barrier device
semiconductor schottky
semiconductor
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA203,594A
Inventor
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1002208A publication Critical patent/CA1002208A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CA203,594A 1973-06-28 1974-06-27 Semiconductor schottky barrier device Expired CA1002208A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7318073A JPS5548705B2 (en) 1973-06-28 1973-06-28

Publications (1)

Publication Number Publication Date
CA1002208A true CA1002208A (en) 1976-12-21

Family

ID=13510672

Family Applications (1)

Application Number Title Priority Date Filing Date
CA203,594A Expired CA1002208A (en) 1973-06-28 1974-06-27 Semiconductor schottky barrier device

Country Status (6)

Country Link
JP (1) JPS5548705B2 (en)
CA (1) CA1002208A (en)
DE (1) DE2431011A1 (en)
FR (1) FR2235493A1 (en)
IT (1) IT1015565B (en)
NL (1) NL7408561A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106528A (en) * 1976-03-03 1977-09-07 Nissan Motor Co Ltd Steering power control apparatus for power steering system
US4156246A (en) * 1977-05-25 1979-05-22 Bell Telephone Laboratories, Incorporated Combined ohmic and Schottky output transistors for logic circuit
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
US5083185A (en) * 1985-02-15 1992-01-21 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Surge absorption device
JPS61205153U (en) * 1986-06-12 1986-12-24
EP2896482A3 (en) 2014-01-15 2015-08-19 Paolo Ficai A finishing grinding wheel and a forming method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor

Also Published As

Publication number Publication date
NL7408561A (en) 1974-12-31
FR2235493B1 (en) 1977-10-07
JPS5548705B2 (en) 1980-12-08
JPS5023178A (en) 1975-03-12
IT1015565B (en) 1977-05-20
FR2235493A1 (en) 1975-01-24
DE2431011A1 (en) 1975-01-30

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