JPS5651868A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5651868A
JPS5651868A JP12919879A JP12919879A JPS5651868A JP S5651868 A JPS5651868 A JP S5651868A JP 12919879 A JP12919879 A JP 12919879A JP 12919879 A JP12919879 A JP 12919879A JP S5651868 A JPS5651868 A JP S5651868A
Authority
JP
Japan
Prior art keywords
layer
region
type
thyristor
type impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12919879A
Other languages
Japanese (ja)
Other versions
JPS6245709B2 (en
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12919879A priority Critical patent/JPS5651868A/en
Publication of JPS5651868A publication Critical patent/JPS5651868A/en
Publication of JPS6245709B2 publication Critical patent/JPS6245709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase a gate trigger current requiring to make a thyristor in a conductive state by converting the surface region of a P2 layer surrounding an N2 layer into a P<-> layer having a few P type impurities when the thyristor composing of P1-N1-P2-N2 is provided. CONSTITUTION:P type layers 3 and 2 are formed respectively by diffusing P type impurities on both sides of an N type Si substrate 1. And a region 4 is formed by diffusion on the central part of the layer 3 to make the thyristor composing of P1- N1-P2-N2. Then, a cathode electrode 8, a gate electrode 7 and an anode electrode 6 are formed on the region 4, the layer 3 and the back of the layer 2 respectively. In this construction, thermal treatment is applied on the surface of the layer 3 surrounding the region 4 to produce oxide film. And the surface of the layer 3 is converted into the shallower P<-> type layer 5 than the region 4 by adsorbing the P type impurities in the layer 3 into the oxide film. In this way, the emission of a small number of carriers proceeding to the inside will not be produced at a P2-N2 diode section. And a big gate trigger current will be obtained.
JP12919879A 1979-10-05 1979-10-05 Semiconductor device Granted JPS5651868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12919879A JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12919879A JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5651868A true JPS5651868A (en) 1981-05-09
JPS6245709B2 JPS6245709B2 (en) 1987-09-28

Family

ID=15003558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12919879A Granted JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5651868A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195867A (en) * 1983-04-20 1984-11-07 Nec Corp Thyristor
JPS59214261A (en) * 1983-05-20 1984-12-04 Mitsubishi Electric Corp Gate turn-off thyristor
JPS61287269A (en) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan Semiconductor element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195867A (en) * 1983-04-20 1984-11-07 Nec Corp Thyristor
JPH0586671B2 (en) * 1983-04-20 1993-12-13 Nippon Electric Co
JPS59214261A (en) * 1983-05-20 1984-12-04 Mitsubishi Electric Corp Gate turn-off thyristor
JPH0479147B2 (en) * 1983-05-20 1992-12-15 Mitsubishi Electric Corp
JPS61287269A (en) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan Semiconductor element

Also Published As

Publication number Publication date
JPS6245709B2 (en) 1987-09-28

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