JPS5658263A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5658263A JPS5658263A JP13297479A JP13297479A JPS5658263A JP S5658263 A JPS5658263 A JP S5658263A JP 13297479 A JP13297479 A JP 13297479A JP 13297479 A JP13297479 A JP 13297479A JP S5658263 A JPS5658263 A JP S5658263A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- thyristor
- switched
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 108091006146 Channels Proteins 0.000 abstract 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To better cooperation between the gate power, di/dt level and dv/dt level by arranging channel sections serving as a section adapted to be initially conducted as several dots in a thyristor designed to be switched off through a reverse bias while switched on upon releasing of bias. CONSTITUTION:A diffusion is made to form a p<+> type anode emitter region 2 on the back of an n<-> type semiconductor substrate 3 serving as base region, on the side of which an anode electrode 7 is applied. A p type gate region 5 is diffused into the surface of the substrate and an n type emitter region 4 is provided within the region. Then, a cathode electrode 8 is mounted on the region 6 while a circular gate electrode 9 on the periphery of the region 5 to make a thyristor. In such an arrangement, holes are provided concentrically in dots on the surrounding area with one set up in the center covering the part of the region 5 in contact with the region 4. The region 4 is allowed to penetrate the holes through the rear surface thereof so that an n type channel region 41 is produced as a region adapted to be initially conducted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13297479A JPS5658263A (en) | 1979-10-17 | 1979-10-17 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13297479A JPS5658263A (en) | 1979-10-17 | 1979-10-17 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5658263A true JPS5658263A (en) | 1981-05-21 |
Family
ID=15093836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13297479A Pending JPS5658263A (en) | 1979-10-17 | 1979-10-17 | Thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5658263A (en) |
-
1979
- 1979-10-17 JP JP13297479A patent/JPS5658263A/en active Pending
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