JPS5493989A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5493989A
JPS5493989A JP76178A JP76178A JPS5493989A JP S5493989 A JPS5493989 A JP S5493989A JP 76178 A JP76178 A JP 76178A JP 76178 A JP76178 A JP 76178A JP S5493989 A JPS5493989 A JP S5493989A
Authority
JP
Japan
Prior art keywords
emitter
shorted
voltage
current
mum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP76178A
Other languages
Japanese (ja)
Other versions
JPS6044830B2 (en
Inventor
Akira Kawakami
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP76178A priority Critical patent/JPS6044830B2/en
Publication of JPS5493989A publication Critical patent/JPS5493989A/en
Publication of JPS6044830B2 publication Critical patent/JPS6044830B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a shorted emitter construction by lowering the resistance of the emitter shorted portion where the base layer penetrates the emitter layer, thereby mitigating the increase in the ion voltage. CONSTITUTION:Impurity concentration on the surface of emitter shorted portions 5a is set to more than 10<-9>/cm<3>. Also the diameter D of the emitter shorted portion is set to less than 30 mum, and the interval between emitter shorted portions is arranged to be less than 200 mum. Consequently, the ratio of the area occupied by the shorted emitter to the cathode area is reduced, and the ON-voltage will be lowered by about 5%. Further, expansion of the conductive region at the time of turning-ON will become more uniform than that of SCR of the conventional consturction, and expanding rate will be increased by 0.05 mm/mus to 0.08 mm/mus compared with the conventional device. Since the impurity is diffused at high concentration only to the shorted emitter region, no adverse effects will be observed upon the gate characteristic of SCR, and various other characteristicsof OFF-voltage, OFF-current, holding current and latch current.
JP76178A 1978-01-06 1978-01-06 semiconductor equipment Expired JPS6044830B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP76178A JPS6044830B2 (en) 1978-01-06 1978-01-06 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP76178A JPS6044830B2 (en) 1978-01-06 1978-01-06 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5493989A true JPS5493989A (en) 1979-07-25
JPS6044830B2 JPS6044830B2 (en) 1985-10-05

Family

ID=11482668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP76178A Expired JPS6044830B2 (en) 1978-01-06 1978-01-06 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6044830B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828869A (en) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp Semiconductor device
JPH0621133U (en) * 1992-05-15 1994-03-18 新巨企業股▲分▼有限公司 Turning switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828869A (en) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp Semiconductor device
JPH0621133U (en) * 1992-05-15 1994-03-18 新巨企業股▲分▼有限公司 Turning switch

Also Published As

Publication number Publication date
JPS6044830B2 (en) 1985-10-05

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