JPS5617068A - Turn-off thyristor - Google Patents
Turn-off thyristorInfo
- Publication number
- JPS5617068A JPS5617068A JP9298379A JP9298379A JPS5617068A JP S5617068 A JPS5617068 A JP S5617068A JP 9298379 A JP9298379 A JP 9298379A JP 9298379 A JP9298379 A JP 9298379A JP S5617068 A JPS5617068 A JP S5617068A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- turn
- diffused
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To improve the withstand voltage of the turn-off thyristor of PNPN layer structure by forming the thickness of a periphery including a bevel surface of a P- type layer disposed under a gate electrode thicker than the center affecting directly the turn-off gain. CONSTITUTION:P-type and P<+>-type layers 1 and 2 are diffused on both front and back surfaces of an N-type Si substrate N1, and involute curve like or comb like P<++>-type region 3 is diffused by selective diffusion in the layer 2. Then, an N-type region 5 having predetermined size is diffused while disposing it on the region 3 in the surface layer of the layer 2, the periphery thereof is mesa etched to form continuous positive and negative bevel surface 9 and 10 so as to form a thyristor. When diffusing the layer 2 in this configuration, the bevel side of the substrate N1 is etched to reduce its thickness, and the bevel side of the layer 2 is increased in thickness than the central portion. Thereafter, there are provided electrodes 6-8 of gate, cathode and heat compensating plate and anode. In this manner, it can increase the withstand voltage without decreasing the turn-off gain.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9298379A JPS5617068A (en) | 1979-07-20 | 1979-07-20 | Turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9298379A JPS5617068A (en) | 1979-07-20 | 1979-07-20 | Turn-off thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5617068A true JPS5617068A (en) | 1981-02-18 |
Family
ID=14069607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9298379A Pending JPS5617068A (en) | 1979-07-20 | 1979-07-20 | Turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5617068A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154564A (en) * | 1984-01-24 | 1985-08-14 | Fuji Electric Corp Res & Dev Ltd | Semiconductor device |
JPS63147368A (en) * | 1986-12-11 | 1988-06-20 | Res Dev Corp Of Japan | Double side gate electrostatic induction thyristor and manufacture thereof |
US4821658A (en) * | 1986-11-08 | 1989-04-18 | Tokyo Juki Industrial Co., Ltd. | Apparatus for setting a workpiece correctly on a skirt-zipper sewing machine |
US4843985A (en) * | 1987-02-27 | 1989-07-04 | Juki Corporation | Apparatus for turning over a garment flap |
US4848255A (en) * | 1984-10-25 | 1989-07-18 | Tokyo Juki Industrial Co., Ltd. | Automatic sewing machine exclusively used for sewing zipper on workpiece |
US4854251A (en) * | 1984-10-25 | 1989-08-08 | Tokyo Juki Industrial Co., Ltd. | Automatic sewing machine exclusively used for sewing zipper on workpiece |
US5081050A (en) * | 1987-08-11 | 1992-01-14 | Bbc Brown Boveri Ag | Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities |
-
1979
- 1979-07-20 JP JP9298379A patent/JPS5617068A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154564A (en) * | 1984-01-24 | 1985-08-14 | Fuji Electric Corp Res & Dev Ltd | Semiconductor device |
US4848255A (en) * | 1984-10-25 | 1989-07-18 | Tokyo Juki Industrial Co., Ltd. | Automatic sewing machine exclusively used for sewing zipper on workpiece |
US4854251A (en) * | 1984-10-25 | 1989-08-08 | Tokyo Juki Industrial Co., Ltd. | Automatic sewing machine exclusively used for sewing zipper on workpiece |
US4870918A (en) * | 1986-08-11 | 1989-10-03 | Tokyo Juki Industrial Co., Ltd. | Method for setting a workpiece correctly on a skirt-zipper sewing machine |
US4821658A (en) * | 1986-11-08 | 1989-04-18 | Tokyo Juki Industrial Co., Ltd. | Apparatus for setting a workpiece correctly on a skirt-zipper sewing machine |
JPS63147368A (en) * | 1986-12-11 | 1988-06-20 | Res Dev Corp Of Japan | Double side gate electrostatic induction thyristor and manufacture thereof |
US4843985A (en) * | 1987-02-27 | 1989-07-04 | Juki Corporation | Apparatus for turning over a garment flap |
US5081050A (en) * | 1987-08-11 | 1992-01-14 | Bbc Brown Boveri Ag | Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities |
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