JPS5617068A - Turn-off thyristor - Google Patents

Turn-off thyristor

Info

Publication number
JPS5617068A
JPS5617068A JP9298379A JP9298379A JPS5617068A JP S5617068 A JPS5617068 A JP S5617068A JP 9298379 A JP9298379 A JP 9298379A JP 9298379 A JP9298379 A JP 9298379A JP S5617068 A JPS5617068 A JP S5617068A
Authority
JP
Japan
Prior art keywords
layer
type
turn
diffused
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9298379A
Other languages
Japanese (ja)
Inventor
Yasuo Kataoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP9298379A priority Critical patent/JPS5617068A/en
Publication of JPS5617068A publication Critical patent/JPS5617068A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the withstand voltage of the turn-off thyristor of PNPN layer structure by forming the thickness of a periphery including a bevel surface of a P- type layer disposed under a gate electrode thicker than the center affecting directly the turn-off gain. CONSTITUTION:P-type and P<+>-type layers 1 and 2 are diffused on both front and back surfaces of an N-type Si substrate N1, and involute curve like or comb like P<++>-type region 3 is diffused by selective diffusion in the layer 2. Then, an N-type region 5 having predetermined size is diffused while disposing it on the region 3 in the surface layer of the layer 2, the periphery thereof is mesa etched to form continuous positive and negative bevel surface 9 and 10 so as to form a thyristor. When diffusing the layer 2 in this configuration, the bevel side of the substrate N1 is etched to reduce its thickness, and the bevel side of the layer 2 is increased in thickness than the central portion. Thereafter, there are provided electrodes 6-8 of gate, cathode and heat compensating plate and anode. In this manner, it can increase the withstand voltage without decreasing the turn-off gain.
JP9298379A 1979-07-20 1979-07-20 Turn-off thyristor Pending JPS5617068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9298379A JPS5617068A (en) 1979-07-20 1979-07-20 Turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9298379A JPS5617068A (en) 1979-07-20 1979-07-20 Turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5617068A true JPS5617068A (en) 1981-02-18

Family

ID=14069607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9298379A Pending JPS5617068A (en) 1979-07-20 1979-07-20 Turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5617068A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154564A (en) * 1984-01-24 1985-08-14 Fuji Electric Corp Res & Dev Ltd Semiconductor device
JPS63147368A (en) * 1986-12-11 1988-06-20 Res Dev Corp Of Japan Double side gate electrostatic induction thyristor and manufacture thereof
US4821658A (en) * 1986-11-08 1989-04-18 Tokyo Juki Industrial Co., Ltd. Apparatus for setting a workpiece correctly on a skirt-zipper sewing machine
US4843985A (en) * 1987-02-27 1989-07-04 Juki Corporation Apparatus for turning over a garment flap
US4848255A (en) * 1984-10-25 1989-07-18 Tokyo Juki Industrial Co., Ltd. Automatic sewing machine exclusively used for sewing zipper on workpiece
US4854251A (en) * 1984-10-25 1989-08-08 Tokyo Juki Industrial Co., Ltd. Automatic sewing machine exclusively used for sewing zipper on workpiece
US5081050A (en) * 1987-08-11 1992-01-14 Bbc Brown Boveri Ag Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154564A (en) * 1984-01-24 1985-08-14 Fuji Electric Corp Res & Dev Ltd Semiconductor device
US4848255A (en) * 1984-10-25 1989-07-18 Tokyo Juki Industrial Co., Ltd. Automatic sewing machine exclusively used for sewing zipper on workpiece
US4854251A (en) * 1984-10-25 1989-08-08 Tokyo Juki Industrial Co., Ltd. Automatic sewing machine exclusively used for sewing zipper on workpiece
US4870918A (en) * 1986-08-11 1989-10-03 Tokyo Juki Industrial Co., Ltd. Method for setting a workpiece correctly on a skirt-zipper sewing machine
US4821658A (en) * 1986-11-08 1989-04-18 Tokyo Juki Industrial Co., Ltd. Apparatus for setting a workpiece correctly on a skirt-zipper sewing machine
JPS63147368A (en) * 1986-12-11 1988-06-20 Res Dev Corp Of Japan Double side gate electrostatic induction thyristor and manufacture thereof
US4843985A (en) * 1987-02-27 1989-07-04 Juki Corporation Apparatus for turning over a garment flap
US5081050A (en) * 1987-08-11 1992-01-14 Bbc Brown Boveri Ag Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities

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