JPS5678165A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5678165A
JPS5678165A JP15430879A JP15430879A JPS5678165A JP S5678165 A JPS5678165 A JP S5678165A JP 15430879 A JP15430879 A JP 15430879A JP 15430879 A JP15430879 A JP 15430879A JP S5678165 A JPS5678165 A JP S5678165A
Authority
JP
Japan
Prior art keywords
layer
attached
substrate
heat treatment
life time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15430879A
Other languages
Japanese (ja)
Inventor
Minoru Azuma
Junko Akagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15430879A priority Critical patent/JPS5678165A/en
Publication of JPS5678165A publication Critical patent/JPS5678165A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve a switching characteristic and OFF characteristic making the distribution of a carrier life time uniform by a method wherein an Au a life time killer is attached on one main surface of a semiconductor substrate having a PN junction and then applied a heat treatment at 700-1,000 deg.C. CONSTITUTION:A Ga is diffused and then a P type base layer 13 and P type anode layer 12 provided with gate electrodes are formed on both sides of the face and the reverse of an Si substrate 11 which will be an N type base layer, a thin phosphor layer in high concentration is attached to the layer 13 and driven-in at 1,200 deg.C to obtain an N type cathode layer 14. In the following, the Au layer 15 is attached to the layer 12 on the back side and a PSG film 26 is formed on the layer 14 on the opposite side by low temperature CVD method and heat treatment is applied to those to diffuse the Au in the layer 15. In such a manner, a gettering takes place in P in the PSG film 26 and accordingly, the Au in the substrate 11 is equally distributed. Thereafter, the film 26 is removed and electrodes are fixed in the respective regions to make the thyristor elements.
JP15430879A 1979-11-30 1979-11-30 Manufacture of semiconductor element Pending JPS5678165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15430879A JPS5678165A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15430879A JPS5678165A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5678165A true JPS5678165A (en) 1981-06-26

Family

ID=15581272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15430879A Pending JPS5678165A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5678165A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205169A (en) * 1983-04-22 1984-11-20 ヴアルタ・バツテリー・アクチエンゲゼルシヤフト Air oxygen battery

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205169A (en) * 1983-04-22 1984-11-20 ヴアルタ・バツテリー・アクチエンゲゼルシヤフト Air oxygen battery
JPH0550827B2 (en) * 1983-04-22 1993-07-30 Varta Batterie

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