JPS56148866A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS56148866A JPS56148866A JP5246080A JP5246080A JPS56148866A JP S56148866 A JPS56148866 A JP S56148866A JP 5246080 A JP5246080 A JP 5246080A JP 5246080 A JP5246080 A JP 5246080A JP S56148866 A JPS56148866 A JP S56148866A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- substrate
- lifetime killer
- gold
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000011521 glass Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 240000007175 Datura inoxia Species 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To readily manufacture a semiconductor element by adhering glass containing heavy metal for a lifetime killer to the P-N junction exposed part of a semiconductor wafer, forming a glass protective film and simultaneously diffusing heavy metel in a substrate. CONSTITUTION:N type base layers 2 are selectively formed at respective semiconductor elements on a P type semiconductor substrate 1, P type base layers 3 are selectively formed in the layers 2, and N type emitter layers 4 are formed in the layers 3. A mesa groove 5 is formed on the surface exposed with the end of the P-N junction, the glass containing beforehand gold becoming a lifetime killer is adhered to the inner surface of the groove 5, baked, and a glass protective film 6 is formed. The lifetime killer gold is diffused upon baking in the substrate 1. Then, a cathode electrode 7, a gate electrode 8 and an anode electrode 9 are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5246080A JPS56148866A (en) | 1980-04-21 | 1980-04-21 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5246080A JPS56148866A (en) | 1980-04-21 | 1980-04-21 | Manufacture of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56148866A true JPS56148866A (en) | 1981-11-18 |
Family
ID=12915323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5246080A Pending JPS56148866A (en) | 1980-04-21 | 1980-04-21 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56148866A (en) |
-
1980
- 1980-04-21 JP JP5246080A patent/JPS56148866A/en active Pending
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