JPS57192088A - Manufacture of light emitting diode - Google Patents

Manufacture of light emitting diode

Info

Publication number
JPS57192088A
JPS57192088A JP7652381A JP7652381A JPS57192088A JP S57192088 A JPS57192088 A JP S57192088A JP 7652381 A JP7652381 A JP 7652381A JP 7652381 A JP7652381 A JP 7652381A JP S57192088 A JPS57192088 A JP S57192088A
Authority
JP
Japan
Prior art keywords
type layer
wafer
face
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7652381A
Other languages
Japanese (ja)
Inventor
Masao Meguro
Yuji Takamizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7652381A priority Critical patent/JPS57192088A/en
Publication of JPS57192088A publication Critical patent/JPS57192088A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

Abstract

PURPOSE:To enhance the quality, to reduce the process of work, and to reduce the manufacturing cost of a light emitting diode by a method wherein the anode electrode face and the cathode electrode face are formed in the same face. CONSTITUTION:A P type layer 4, an N type layer 5, an N<+> type layer 6 are formed on the main face of a semiconductor wafer 3. Then a photo resist film 17 is formed, and is removed in a ring type. The N<+> type layer 6, the N type layer 5 are etched using the resist film as the mask to form a groove 18. Then zinc is made to be diffused on the main face side of the wafer shallower than the N<+> type layer 6 to form a P<+> type layer 19. Then a cathode electrode 8 is provided inside of the groove 18, and an anode electrode 9 is provided outside. Then the P<+> type layer at the part being not covered with the electrodes 8, 9 is removed by etching. After then, the surface of the wafer at the part other than the electrode parts is covered with an insulating protective film 20, and the wafer 3 is divided into pellets.
JP7652381A 1981-05-22 1981-05-22 Manufacture of light emitting diode Pending JPS57192088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7652381A JPS57192088A (en) 1981-05-22 1981-05-22 Manufacture of light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7652381A JPS57192088A (en) 1981-05-22 1981-05-22 Manufacture of light emitting diode

Publications (1)

Publication Number Publication Date
JPS57192088A true JPS57192088A (en) 1982-11-26

Family

ID=13607638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7652381A Pending JPS57192088A (en) 1981-05-22 1981-05-22 Manufacture of light emitting diode

Country Status (1)

Country Link
JP (1) JPS57192088A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055422A (en) * 1988-12-09 1991-10-08 Thomson-Csf Process for the construction of semiconductor lasers and lasers obtained by the process
EP0720241A3 (en) * 1994-12-27 1998-10-21 AT&T Corp. Structure of and method for manufacturing an LED
JP2019212834A (en) * 2018-06-07 2019-12-12 信越半導体株式会社 Light-emitting element and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055422A (en) * 1988-12-09 1991-10-08 Thomson-Csf Process for the construction of semiconductor lasers and lasers obtained by the process
EP0720241A3 (en) * 1994-12-27 1998-10-21 AT&T Corp. Structure of and method for manufacturing an LED
JP2019212834A (en) * 2018-06-07 2019-12-12 信越半導体株式会社 Light-emitting element and method of manufacturing the same

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