JPS5789274A - Manufacture of light emitting element - Google Patents

Manufacture of light emitting element

Info

Publication number
JPS5789274A
JPS5789274A JP16456480A JP16456480A JPS5789274A JP S5789274 A JPS5789274 A JP S5789274A JP 16456480 A JP16456480 A JP 16456480A JP 16456480 A JP16456480 A JP 16456480A JP S5789274 A JPS5789274 A JP S5789274A
Authority
JP
Japan
Prior art keywords
layer
ring
electrode
center
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16456480A
Other languages
Japanese (ja)
Inventor
Masao Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16456480A priority Critical patent/JPS5789274A/en
Publication of JPS5789274A publication Critical patent/JPS5789274A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

PURPOSE:To prevent deterioration of the property by forming P, N, P<+> layers consecutively in the exposed surface made by removing a ring and the center of the ring of a P<+> layer formed on a wafer and by mesa etching the junction of a ring type electrode and an electrode in the center of the ring. CONSTITUTION:A ring type electrode 18 and an electrode 19 at the center of a ring are removed from a P<+> layer formed on a Ga Al As layer 2. An electrode 19 and a P layer 4, an N layer 5 and N<+> layer are formed on the inside surface of the ring by epitaxial method. A round cathode electrode 8 is formed on the N<+> layer 6 formed in the center 19 by removing an electrode layer deposited on the entire surface of the wafer 3. An anode electrode of horse shoe shape is formed on the N<+> layer 6 in the ring 18 from the periphery. The junctions of the N<+> layer 6, N layer 5 and P layer 4 are mesa etched. This method prevents the deterioration of property and decreases manufacturing processes.
JP16456480A 1980-11-25 1980-11-25 Manufacture of light emitting element Pending JPS5789274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16456480A JPS5789274A (en) 1980-11-25 1980-11-25 Manufacture of light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16456480A JPS5789274A (en) 1980-11-25 1980-11-25 Manufacture of light emitting element

Publications (1)

Publication Number Publication Date
JPS5789274A true JPS5789274A (en) 1982-06-03

Family

ID=15795553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16456480A Pending JPS5789274A (en) 1980-11-25 1980-11-25 Manufacture of light emitting element

Country Status (1)

Country Link
JP (1) JPS5789274A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933888A (en) * 1982-08-20 1984-02-23 Hitachi Ltd Semiconductor light emitting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136085A (en) * 1974-09-24 1976-03-26 Mitsubishi Electric Corp
JPS54114094A (en) * 1978-02-24 1979-09-05 Matsushita Electric Ind Co Ltd Luminous semiconductor device and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136085A (en) * 1974-09-24 1976-03-26 Mitsubishi Electric Corp
JPS54114094A (en) * 1978-02-24 1979-09-05 Matsushita Electric Ind Co Ltd Luminous semiconductor device and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933888A (en) * 1982-08-20 1984-02-23 Hitachi Ltd Semiconductor light emitting device

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